Mikhail I. Vexler

According to our database, Mikhail I. Vexler authored at least 9 papers between 2001 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.

Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.

Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2020

Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.

Yury Yu. Illarionov, A. G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, N. S. Sokolov, Tibor Grasser

Proceedings of the 2020 Device Research Conference, 2020

2016

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2007

Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon.

I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler

Microelectron. Reliab., 2007

2006

The post-damage behavior of a MOS tunnel emitter transistor.

S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, I. V. Grekhov

Microelectron. Reliab., 2006

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures.

M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov

Microelectron. J., 2006

2004

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness.

R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler

Microelectron. Reliab., 2004

2001

Threshold energies in the light emission characteristics of silicon MOS tunnel diodes.

N. Asli, M. I. Vexler, A. F. Shulekin, P. Douglas Yoder, I. V. Grekhov, Peter Seegebrecht

Microelectron. Reliab., 2001