Bernhard Stampfer

According to our database, Bernhard Stampfer authored at least 4 papers between 2017 and 2021.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2021

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.

Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.

Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2018

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.

Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer

Proceedings of the IEEE International Reliability Physics Symposium, 2018

2017

Physical modeling of the hysteresis in M0S2 transistors.

Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser

Proceedings of the 47th European Solid-State Device Research Conference, 2017