Francesca Chiocchetta

According to our database, Francesca Chiocchetta authored at least 4 papers between 2020 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

Z. Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz

Proceedings of the IEEE International Reliability Physics Symposium, 2022

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.

Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs.

Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling.

Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020