C. Mukherjee

Orcid: 0000-0002-8206-2779

Affiliations:
  • University of Bordeaux, Talence, France


According to our database1, C. Mukherjee authored at least 20 papers between 2014 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
InP DHBT Analytical Modeling: Toward THz Transistors.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., November, 2023

SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., September, 2023

Electrothermal modeling of junctionless vertical Si nanowire transistors for 3D logic circuit design.
Proceedings of the 53rd IEEE European Solid-State Device Research Conference, 2023

2022
Analysis of an Inverter Logic Cell based on 3D Vertical NanoWire Junction-Less Transistors.
Proceedings of the 30th IFIP/IEEE 30th International Conference on Very Large Scale Integration, 2022

A Logic Cell Design and routing Methodology Specific to VNWFET.
Proceedings of the 20th IEEE Interregional NEWCAS Conference, 2022

InP DHBT test structure optimization towards 110 GHz characterization.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021
Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit Technology.
Proceedings of the 51st IEEE European Solid-State Device Research Conference, 2021

Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit Design.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BVCE0 > 4.5 V.
Proceedings of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2021

2020
3D logic cells design and results based on Vertical NWFET technology including tied compact model.
CoRR, 2020

3D Logic Cells Design and Results Based on Vertical NWFET Technology Including Tied Compact Model.
Proceedings of the 28th IFIP/IEEE International Conference on Very Large Scale Integration, 2020

2019
First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design.
Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017
Random telegraph noise in SiGe HBTs: Reliability analysis close to SOA limit.
Microelectron. Reliab., 2017

1/f Noise in 3D vertical gate-all-around junction-less silicon nanowire transistors.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016
Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

Physics-based electrical compact model for monolayer Graphene FETs.
Proceedings of the 46th European Solid-State Device Research Conference, 2016

2015
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs.
Proceedings of the 45th European Solid State Device Research Conference, 2015

A new physics-based compact model for Bilayer Graphene Field-Effect Transistors.
Proceedings of the 45th European Solid State Device Research Conference, 2015

2014
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation.
Proceedings of the 44th European Solid State Device Research Conference, 2014


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