Chris Hull

Orcid: 0000-0002-8479-2062

Affiliations:
  • Intel Corporation, Hillsboro, OR, USA


According to our database1, Chris Hull authored at least 30 papers between 1996 and 2023.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

Online presence:

On csauthors.net:

Bibliography

2023
A 128-Gb/s D-Band Receiver With Integrated PLL and ADC Achieving 1.95-pJ/b Efficiency in 22-nm FinFET.
IEEE J. Solid State Circuits, December, 2023

A VTC/TDC-Assisted 4× Interleaved 3.8 GS/s 7b 6.0 mW SAR ADC With 13 GHz ERBW.
IEEE J. Solid State Circuits, 2023

A 128Gb/s 1.95pJ/b D-Band Receiver with Integrated PLL and ADC in 22nm FinFET.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022
A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET.
IEEE J. Solid State Circuits, 2022

A 6.0mW 3.8GS/s 7b VTC/TDC-Assisted Interleaved SAR ADC with 13GHz ERBW.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2021
A Reconfigurable Non-Uniform Power-Combining V-Band PA With +17.9 dBm P<sub>sat</sub> and 26.5% PAE in 16-nm FinFET CMOS.
IEEE J. Solid State Circuits, 2021

2019
An $E$ -Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS.
IEEE J. Solid State Circuits, 2019

A Scalable 71-to-76GHz 64-Element Phased-Array Transceiver Module with 2×2 Direct-Conversion IC in 22nm FinFET CMOS Technology.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018
A CMOS Wideband Current-Mode Digital Polar Power Amplifier With Built-In AM-PM Distortion Self-Compensation.
IEEE J. Solid State Circuits, 2018

Architecture and Circuit Choices for 5G Millimeter-Wave Beamforming Transceivers.
IEEE Commun. Mag., 2018

FinFET for mm Wave - Technology and Circuit Design Challenges.
Proceedings of the 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2018

2017
13.8 A 24dBm 2-to-4.3GHz wideband digital Power Amplifier with built-in AM-PM distortion self-compensation.
Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2015
A circuit designer's guide to 5G mm-wave.
Proceedings of the 2015 IEEE Custom Integrated Circuits Conference, 2015

2014
A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS.
IEEE Trans. Circuits Syst. I Regul. Pap., 2014

Design Techniques for a Mixed-Signal I/Q 32-Coefficient Rx-Feedforward Equalizer, 100-Coefficient Decision Feedback Equalizer in an 8 Gb/s 60 GHz 65 nm LP CMOS Receiver.
IEEE J. Solid State Circuits, 2014

2013
A mixed-signal 32-coefficient RX-FFE 100-coefficient DFE for an 8Gb/s 60GHz receiver in 65nm LP CMOS.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

An RF receiver with an integrated adaptive notch filter for multi-standard applications.
Proceedings of the ESSCIRC 2013, 2013

A 60 GHz linear wideband power amplifier using cascode neutralization in 28 nm CMOS.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

A fully integrated highly linear receiver with automatic IP2 calibration schemes for multi-standard applications.
Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 2013

2012
A Transformer-Based Broadband Front-End Combo in Standard CMOS.
IEEE J. Solid State Circuits, 2012

2011
A transformer-based broadband I/O matching-balun-T/R switch front-end combo scheme in standard CMOS.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011

Overlapped inductors and its application on a shared RF front-end in a MultiStandard IC.
Proceedings of the 2011 IEEE Custom Integrated Circuits Conference, 2011

2009
A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax Applications.
IEEE J. Solid State Circuits, 2009

A 1.1V 5-to-6GHz reduced-component direct-conversion transmit signal path in 45nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

A single-chip highly linear 2.4GHz 30dBm power amplifier in 90nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

1999
A 2.7-V 900-MHz/1.9-GHz dual-band transceiver IC for digital wireless communication.
IEEE J. Solid State Circuits, 1999

Substrate-induced high-frequency noise in deep sub-micron MOSFETs for RF applications.
Proceedings of the IEEE 1999 Custom Integrated Circuits Conference, 1999

1997
A class AB monolithic mixer for 900-MHz applications.
IEEE J. Solid State Circuits, 1997

1996
A direct-conversion receiver for 900 MHz (ISM band) spread-spectrum digital cordless telephone.
IEEE J. Solid State Circuits, 1996


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