Ofir B. Degani

Affiliations:
  • Intel Corporation, Haifa, Israel


According to our database1, Ofir B. Degani authored at least 19 papers between 2008 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2023
A 1.8W High-Frequency SIMO Converter Featuring Digital Sensor-Less Computational Zero-Current Operation and Non-Linear Duty-Boost.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023

2022
A 16nm, +28dBm Dual-Band All-Digital Polar Transmitter Based on 4-core Digital PA for Wi-Fi6E Applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2020
A Cellular Multiband DTC-Based Digital Polar Transmitter With -153-dBc/Hz Noise in 14-nm FinFET.
IEEE J. Solid State Circuits, 2020

A Fully Integrated 27-dBm Dual-Band All-Digital Polar Transmitter Supporting 160 MHz for Wi-Fi 6 Applications.
IEEE J. Solid State Circuits, 2020

10.5 A Fully Integrated 27dBm Dual-Band All-Digital Polar Transmitter Supporting 160MHz for WiFi 6 Applications.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2019
A Cellular Multiband DTC-Based Digital Polar Transmitter With -153 dBc/Hz Noise in 14-nm FinFET.
Proceedings of the 45th IEEE European Solid State Circuits Conference, 2019

2016
A 2 GHz 244 fs-Resolution 1.2 ps-Peak-INL Edge Interpolator-Based Digital-to-Time Converter in 28 nm CMOS.
IEEE J. Solid State Circuits, 2016

2.9 A 2GHz 244fs-resolution 1.2ps-Peak-INL edge-interpolator-based digital-to-time converter in 28nm CMOS.
Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2013
A Class-G Switched-Capacitor RF Power Amplifier.
IEEE J. Solid State Circuits, 2013

2012
A Transformer-Combined 31.5 dBm Outphasing Power Amplifier in 45 nm LP CMOS With Dynamic Power Control for Back-Off Power Efficiency Enhancement.
IEEE J. Solid State Circuits, 2012

A 2.4-GHz 20-40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS.
IEEE J. Solid State Circuits, 2012

A 20dBm 2.4GHz digital outphasing transmitter for WLAN application in 32nm CMOS.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2011
A 45 nm CMOS miniature phase shifter with constant amplitude response.
Microelectron. J., 2011

A 31.5dBm outphasing class-D power amplifier in 45nm CMOS with back-off efficiency enhancement by dynamic power control.
Proceedings of the 37th European Solid-State Circuits Conference, 2011

2009
A Class-E PA With Pulse-Width and Pulse-Position Modulation in 65 nm CMOS.
IEEE J. Solid State Circuits, 2009

A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax Applications.
IEEE J. Solid State Circuits, 2009

A single-chip highly linear 2.4GHz 30dBm power amplifier in 90nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008
A 28.6dBm 65nm Class-E PA with Envelope Restoration by Pulse-Width and Pulse-Position Modulation.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

A 1×2 MIMO Multi-Band CMOS Transceiver with an Integrated Front-End in 90nm CMOS for 802.11a/g/n WLAN Applications.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008


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