F. Mazen

According to our database, F. Mazen authored at least 3 papers between 2016 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Engineered SiC materials for power technologies.

Walter Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, Enrica Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, Christophe Maleville

Proceedings of the International Conference on IC Design and Technology, 2022

2021

16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors.

Laurent Grenouillet, Niccolo Castellani, Alain Persico, Valentina Meli, S. Martin, Olivier Billoint, R. Segaud, Stefania Bernasconi, C. Pellissier, Carine Jahan, Christelle Charpin-Nicolle, P. Dezest, Catherine Carabasse, Paul Besombes, S. Ricavy, N. P. Tran, A. Magalhaes-Lucas, A. Roman, C. Boixaderas, Thomas Magis, Messaoud Bedjaoui, M. Tessaire, A. Seignard, F. Mazen, S. Landis, Elisa Vianello, Gabriel Molas, Fred Gaillard, Julien Arcamone, E. Nowak

Proceedings of the IEEE International Memory Workshop, 2021

2016

Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells.

M. Barlas, Boubacar Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, Mouhamad Alayan, Benoit Sklénard, Eric Jalaguier, Philippe Rodriguez, F. Mazen, E. Vilain, M. Guillermet, Simon Jeannot, Elisa Vianello, Luca Perniola

Proceedings of the 46th European Solid-State Device Research Conference, 2016