Walter Schwarzenbach

According to our database, Walter Schwarzenbach authored at least 9 papers between 2010 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Engineered SiC materials for power technologies.

Walter Schwarzenbach, S. Rouchier, G. Berre, R. Boulet, O. Ledoux, Enrica Cela, A. Drouin, A. Chapelle, S. Monnoye, H. Biard, K. Alassaad, L. Viravaux, N. Ben Mohamed, D. Radisson, G. Picun, G. Lavaitte, A. Bouville-Lallart, J. Roi, J. Widiez, K. Abadie, E. Rolland, F. Fournel, G. Gélineau, F. Mazen, A. Moulin, C. Moulin, D. Delprat, N. Daval, S. Odoul, P. Sandri, Christophe Maleville

Proceedings of the International Conference on IC Design and Technology, 2022

2019

Low Temperature SmartCutTM enables High Density 3D SoC Applications.

Walter Schwarzenbach, Bich-Yen Nguyen, Guillaume Besnard

Proceedings of the International Conference on IC Design and Technology, 2019

22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale.

Walter Schwarzenbach, L. Loubriat, Vincent Joseph, Laurent Viravaux, Olivier Moreau, Sebastien Lasserre, Bich-Yen Nguyen

Proceedings of the 49th European Solid-State Device Research Conference, 2019

2017

FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond.

Walter Schwarzenbach, Manuel Sellier, Bich-Yen Nguyen, Christophe Girard, Christophe Maleville

Proceedings of the 2017 IEEE International Conference on IC Design and Technology, 2017

2015

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology.

Guillaume Besnard, Xavier Garros, Alexandre Subirats, François Andrieu, X. Federspiel, M. Rafik, Walter Schwarzenbach, Gilles Reimbold, Olivier Faynot, Sorin Cristoloveanu

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes.

Guillaume Besnard, Xavier Garros, François Andrieu, P. Nguyen, W. van den Daele, P. Reynaud, Walter Schwarzenbach, D. Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu

Proceedings of the 44th European Solid State Device Research Conference, 2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Strained silicon on insulator substrates for fully depleted application.

Walter Schwarzenbach, N. Daval, S. Kerdiles, G. Chabanne, C. Figuet, S. Guerroudj, O. Bonnin, X. Cauchy, Bich-Yen Nguyen, Christophe Maleville

Proceedings of the IEEE International Conference on IC Design & Technology, 2012

2010

FDSOI: From substrate to devices and circuit applications.

Carlos Mazure, Richard Ferrant, Bich-Yen Nguyen, Walter Schwarzenbach, Cécile Moulin

Proceedings of the 36th European Solid-State Circuits Conference, 2010