Danian Dong

Orcid: 0000-0002-9740-687X

According to our database1, Danian Dong authored at least 12 papers between 2019 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2023
A 40-nm SONOS Digital CIM Using Simplified LUT Multiplier and Continuous Sample-Hold Sense Amplifier for AI Edge Inference.
IEEE Trans. Very Large Scale Integr. Syst., December, 2023

Echo state graph neural networks with analogue random resistive memory arrays.
Nat. Mac. Intell., February, 2023

2022
A 13 µW Analog Front-End with RRAM-Based Lowpass FIR Filter for EEG Signal Detection.
Sensors, 2022

Mixed-Precision Continual Learning Based on Computational Resistance Random Access Memory.
Adv. Intell. Syst., 2022

Few-shot graph learning with robust and energy-efficient memory-augmented graph neural network (MAGNN) based on homogeneous computing-in-memory.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm<sup>2</sup>) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

First Demonstration of High-Sensitivity (NEP 1fW<sup>1/2</sup>) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021
Echo state graph neural networks with analogue random resistor arrays.
CoRR, 2021

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m<sup>2</sup> Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021

Scaling Potential Analysis for the CMOS Compatible Ox-RRAM.
Proceedings of the IEEE International Memory Workshop, 2021

Effect of conductive filament morphology on soft error of oxide based Resistive Random Access Memory.
Proceedings of the 2021 IEEE International Conference on Integrated Circuits, 2021

2019
A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique.
IEICE Electron. Express, 2019


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