Kai-Hsin Chuang

According to our database, Kai-Hsin Chuang authored at least 6 papers between 2018 and 2020.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2020

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation.

Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS.

Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede

IEEE J. Solid State Circuits, 2019

2018

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF.

Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede

IACR Trans. Cryptogr. Hardw. Embed. Syst., 2018

A multi-bit/cell PUF using analog breakdown positions in CMOS.

Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede

Proceedings of the IEEE International Reliability Physics Symposium, 2018

Self-heating-aware CMOS reliability characterization using degradation maps.

Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten

Proceedings of the IEEE International Reliability Physics Symposium, 2018

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS.

Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede

Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018