Erik Bury

According to our database1, Erik Bury authored at least 27 papers between 2012 and 2022.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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PhD thesis 
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Links

On csauthors.net:

Bibliography

2022
Self-Heating in iN8-iN2 CMOS Logic Cells: Thermal Impact of Architecture (FinFET, Nanosheet, Forksheet and CFET) and Scaling Boosters.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021
A BSIM-Based Predictive Hot-Carrier Aging Compact Model.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Physics-based device aging modelling framework for accurate circuit reliability assessment.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

2020
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation.
Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2019
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS.
IEEE J. Solid State Circuits, 2019

Full (V<sub>g</sub>, V<sub>d</sub>) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {V<sub>G</sub>, V<sub>D</sub>} bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab., 2018

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

A multi-bit/cell PUF using analog breakdown positions in CMOS.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Self-heating-aware CMOS reliability characterization using degradation maps.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2015
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

Origins and implications of increased channel hot carrier variability in nFinFETs.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.
Proceedings of the IEEE International Reliability Physics Symposium, 2015

The defect-centric perspective of device and circuit reliability - From individual defects to circuits.
Proceedings of the 45th European Solid State Device Research Conference, 2015

2012
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks.
Proceedings of the 2012 European Solid-State Device Research Conference, 2012


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