Kenji Tsuchida

According to our database, Kenji Tsuchida authored at least 12 papers between 1989 and 2019.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2019

A perspective on NVRAM technology for future computing system.

Katsuhiko Hoya, Kosuke Hatsuda, Kenji Tsuchida, Yohji Watanabe, Yusuke Shirota, Tatsunori Kanai

Proceedings of the International Symposium on VLSI Design, Automation and Test, 2019

2017

23.5 A 4Gb LPDDR2 STT-MRAM with compact 9F2 1T1MTJ cell and hierarchical bitline architecture.

Kwangmyoung Rho, Kenji Tsuchida, Dongkeun Kim, Yutaka Shirai, Jihyae Bae, Tsuneo Inaba, Hiromi Noro, Hyunin Moon, Sungwoong Chung, Kazumasa Sunouchi, Jinwon Park, Kiseon Park, Akihito Yamamoto, Seoungju Chung, Hyeongon Kim, Hisato Oyamatsu, Jonghoon Oh

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2010

A 64Mb MRAM with clamped-reference and adequate-reference schemes.

Kenji Tsuchida, Tsuneo Inaba, Katsuyuki Fujita, Yoshihiro Ueda, Takafumi Shimizu, Yoshiaki Asao, Takeshi Kajiyama, Masayoshi Iwayama, Kuniaki Sugiura, Sumio Ikegawa, Tatsuya Kishi, Tadashi Kai, Minoru Amano, Naoharu Shimomura, Hiroaki Yoda, Yohji Watanabe

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2008

A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory.

Yoshiaki Asao, Masayoshi Iwayama, Kenji Tsuchida, Akihiro Nitayama, Hiroaki Yoda, Hisanori Aikawa, Sumio Ikegawa, Tatsuya Kishi

Proceedings of the 23rd IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems (DFT 2008), 2008

2006

MRAM Write Error Categorization with QCKB.

Yuui Shimizu, Hisanori Aikawa, Keiji Hosotani, Naoharu Shimomura, Tadashi Kai, Yoshihiro Ueda, Yoshiaki Asao, Yoshihisa Iwata, Kenji Tsuchida, Sumio Ikegawa

Proceedings of the 14th IEEE International Workshop on Memory Technology, 2006

A 16Mb MRAM with FORK Wiring Scheme and Burst Modes.

Yoshihisa Iwata, Kenji Tsuchida, Tsuneo Inaba, Yui Shimizu, R. Takizawa, Yoshihiro Ueda, Tadahiko Sugibayashi, Yoshiaki Asao, Takeshi Kajiyama, Keiji Hosotani, Sumio Ikegawa, Tadashi Kai, M. Nakayama, Shuichi Tahara, Hiroaki Yoda

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2003

Resistance ratio read (R³) architecture for a burst operated 1.5V MRAM macro.

Tsuneo Inaba, Kenji Tsuchida, Tadahiko Sugibayashi, Shuichi Tahara, Hiroaki Yoda

Proceedings of the IEEE Custom Integrated Circuits Conference, 2003

1992

Word-line architecture for highly reliable 64-Mb DRAM.

Daisaburo Takashima, Yukihito Oowaki, Ryu Ogiwara, Yohji Watanabe, Kenji Tsuchida, Masako Ohta, Hiroaki Nakano, Shigeyoshi Watanabe, Kazunori Ohuchi

IEEE J. Solid State Circuits, April, 1992

1991

A 33-ns 64-Mb DRAM.

Yukihito Oowaki, Kenji Tsuchida, Yohji Watanabe, Daisaburo Takashima, Masako Ohta, Hiroaki Nakano, Shigeyoshi Watanabe, Akihiro Nitayama, Fumio Horiguchi, Kazunori Ohuchi, Fujio Masuoka

IEEE J. Solid State Circuits, November, 1991

1990

The stabilized reference-line (SRL) technique for scaled DRAMs.

Kenji Tsuchida, Yukihito Oowaki, Masako Ohta, Daisaburo Takashima, Shigeyoshi Watanabe, Kazuya Ohuchi, Fujio Masuoka

IEEE J. Solid State Circuits, February, 1990

1989

New nibbled-page architecture for high-density DRAMs.

Kenji Numata, Yukihito Oowaki, Yasuo Itoh, Takahiko Hara, Kenji Tsuchida, Masako Ohta, Shigyoshi Watanabe, Kazunori Ohuchi

IEEE J. Solid State Circuits, August, 1989

An experimental 16-Mbit CMOS DRAM chip with a 100-MHz serial read/write mode.

Shigeyoshi Watanabe, Yukihito Oowaki, Yasuo Itoh, Koji Sakui, Kenji Numata, Tsuneaki Fuse, Takayuki Kobayashi, Kenji Tsuchida, Masahiko Chiba, Takahiko Hara, Masako Ohta, Fumio Horiguchi, Katsuhiko Hieda, Akihiro Nitayama, Takeshi Hamamoto, Kazunori Ohuchi, Fujio Masuoka

IEEE J. Solid State Circuits, June, 1989