Nihar R. Mohapatra

Orcid: 0000-0002-8827-5417

According to our database1, Nihar R. Mohapatra authored at least 25 papers between 2001 and 2024.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of five.

Timeline

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Bibliography

2024
K-means Clustering with ANN based Classification to Predict Current-Voltage Characteristics of Advanced FETs.
Proceedings of the 37th International Conference on VLSI Design and 23rd International Conference on Embedded Systems, 2024

2023
Process Voltage Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling based Neuron.
CoRR, 2023

2022
Dispersion in Placement: Quantification and Insights.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2022

High Resolution Temperature Sensor Signal Processing ASIC for Cryo-Cooler Electronics.
Proceedings of the VLSI Design and Test - 26th International Symposium, 2022

2021
Behavior of LDMOS transistors at cryogenic temperature - An experiment based analysis.
Proceedings of the 25th International Symposium on VLSI Design and Test, 2021

2020
Gradient Error Compensation in SC-MDACs.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2020

The Design of Ultra Low Power SAR ADC for Implantable Cardioverter Defibrillator (ICD).
Proceedings of the 33rd International Conference on VLSI Design and 19th International Conference on Embedded Systems, 2020

2019
Band-to-Band Tunneling based Ultra-Energy Efficient Silicon Neuron.
CoRR, 2019

A Mismatch Resilient 16-Bit 20 MS/s Pipelined ADC.
Proceedings of the 32nd International Conference on VLSI Design and 18th International Conference on Embedded Systems, 2019

An Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double Gate MOS Transistors.
Proceedings of the 32nd International Conference on VLSI Design and 18th International Conference on Embedded Systems, 2019

Design and Calibration of 14-bit 10 KS/s Low Power SAR ADC for Bio-medical Applications.
Proceedings of the VLSI Design and Test - 23rd International Symposium, 2019

Capacitance and Surface Potential Model for III-V Double-Gate FET.
Proceedings of the 2nd International Symposium on Devices, Circuits and Systems, 2019

2018
The HotSpot Compensation in High Speed Data Converters.
Proceedings of the IEEE 61st International Midwest Symposium on Circuits and Systems, 2018

Mismatch Resilient 3.5-Bit MDAC with MCS-CFCS.
Proceedings of the 2018 IEEE Computer Society Annual Symposium on VLSI, 2018

An Ultra Energy Efficient Neuron enabled by Tunneling in Sub-threshold Regime on a Highly Manufacturable 32 nm SOI CMOS Technology.
Proceedings of the 76th Device Research Conference, 2018

2017
A 64b/66b Line Encoding for High Speed Serializers.
Proceedings of the 30th International Conference on VLSI Design and 16th International Conference on Embedded Systems, 2017

Low-Power Sequential Circuit Design Using Work-Function Engineered FinFETs.
Proceedings of the VLSI Design and Test - 21st International Symposium, 2017

Performance Optimized 64b/66b Line Encoding Technique for High Speed SERDES Devices.
Proceedings of the VLSI Design and Test - 21st International Symposium, 2017

Trap-assisted carrier transport through the multi-stack gate dielectrics of HKMG nMOS transistors: A compact model.
Proceedings of the 47th European Solid-State Device Research Conference, 2017

2016
Analysis and Modeling of Stress over Layer Induced Threshold Voltage Shift in HKMG nMOS Transistors.
Proceedings of the 29th International Conference on VLSI Design and 15th International Conference on Embedded Systems, 2016

Novel design of a silicon photodetector and its integration in a 4×4 CMOS pixel array.
Proceedings of the 17th International Symposium on Quality Electronic Design, 2016

2003
Detailed Analysis of FIBL in MOS Transistors with High-K Gate Dielectrics.
Proceedings of the 16th International Conference on VLSI Design (VLSI Design 2003), 2003

Application of Look-up Table Approach to High-K Gate Dielectric MOS Transistor circuits.
Proceedings of the 16th International Conference on VLSI Design (VLSI Design 2003), 2003

2001
Sub-100 nm CMOS circuit performance with high-K gate dielectrics.
Microelectron. Reliab., 2001

Effect Of Fringing Capacitances In Sub 100 Nm Mosfet's With High-K Gate Dielectrics.
Proceedings of the 14th International Conference on VLSI Design (VLSI Design 2001), 2001


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