William Shih

According to our database, William Shih authored at least 3 papers between 2020 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage.

Dai-Jie Lin, Chih-Kang Chang, Kuntal Das Barman, Yu-Chuan Chu, William Shih, Jian-Jang Huang

IEEE Access, 2023

2021

A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips.

Xin Si, Yung-Ning Tu, Wei-Hsing Huang, Jian-Wei Su, Pei-Jung Lu, Jing-Hong Wang, Ta-Wei Liu, Ssu-Yen Wu, Ruhui Liu, Yen-Chi Chou, Yen-Lin Chung, William Shih, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Nan-Chun Lien, Wei-Chiang Shih, Yajuan He, Qiang Li, Meng-Fan Chang

IEEE J. Solid State Circuits, 2021

2020

15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips.

Xin Si, Yung-Ning Tu, Wei-Hsing Huang, Jian-Wei Su, Pei-Jung Lu, Jing-Hong Wang, Ta-Wei Liu, Ssu-Yen Wu, Ruhui Liu, Yen-Chi Chou, Zhixiao Zhang, Syuan-Hao Sie, Wei-Chen Wei, Yun-Chen Lo, Tai-Hsing Wen, Tzu-Hsiang Hsu, Yen-Kai Chen, William Shih, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Nan-Chun Lien, Wei-Chiang Shih, Yajuan He, Qiang Li, Meng-Fan Chang

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020