Chao-En Ke

According to our database, Chao-En Ke authored at least 3 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

A 22 nm 10.03-237.99 TOPS/W Time-Digital-Hybrid SRAM Compute-in-Memory AI Accelerator for GNN Edge Device Applications.

Chuan-Jia Jhang, Win-San Khwa, Ping-Chun Wu, Ashwin Sanjay Lele, Ping-Sheng Wu, Chao-En Ke, Ting-Chien Chiu, Yu-Cheng Hung, Wei-Ting Hsu, Jun-Ming Hsu, Chiao-Yen Cheng, Yu-Chen Chen, Jui-Jen Wu, Meng-Fan Chang

IEEE Trans. Circuits Syst. Artif. Intell., September, 2024

A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips.

Ping-Chun Wu, Jian-Wei Su, Li-Yang Hong, Jin-Sheng Ren, Chih-Han Chien, Ho-Yu Chen, Chao-En Ke, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang

IEEE J. Solid State Circuits, January, 2024

2023

A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices.

Ping-Chun Wu, Jian-Wei Su, Li-Yang Hong, Jin-Sheng Ren, Chih-Han Chien, Ho-Yu Chen, Chao-En Ke, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang

Proceedings of the IEEE International Solid- State Circuits Conference, 2023