Sih-Han Li
Orcid: 0000-0001-7566-8185
According to our database1,
Sih-Han Li
authored at least 14 papers
between 2019 and 2024.
Collaborative distances:
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Bibliography
2024
8-Bit Precision 6T SRAM Compute-in-Memory Macro Using Global Bitline-Combining Scheme for Edge AI Chips.
IEEE Trans. Circuits Syst. II Express Briefs, April, 2024
A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips.
IEEE J. Solid State Circuits, January, 2024
2023
A 8-b-Precision 6T SRAM Computing-in-Memory Macro Using Segmented-Bitline Charge-Sharing Scheme for AI Edge Chips.
IEEE J. Solid State Circuits, March, 2023
A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices.
Proceedings of the IEEE International Solid- State Circuits Conference, 2023
2022
Two-Way Transpose Multibit 6T SRAM Computing-in-Memory Macro for Inference-Training AI Edge Chips.
IEEE J. Solid State Circuits, 2022
An Embedded Multi-Die Active Bridge (EMAB) Chip for Rapid-Prototype Programmable 2.5D/3D Packaging Technology.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices.
Proceedings of the IEEE International Solid-State Circuits Conference, 2022
2021
16.3 A 28nm 384kb 6T-SRAM Computation-in-Memory Macro with 8b Precision for AI Edge Chips.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
A 48 TOPS and 20943 TOPS/W 512kb Computation-in-SRAM Macro for Highly Reconfigurable Ternary CNN Acceleration.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021
A 1280 x 720 Micro-LED Display Driver with 10-Bit Current-Mode Pulse Width Modulation.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021
2020
A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors.
IEEE J. Solid State Circuits, 2020
15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 55nm 1-to-8 bit Configurable 6T SRAM based Computing-in-Memory Unit-Macro for CNN-based AI Edge Processors.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2019
Proceedings of the 13th IEEE International Conference on ASIC, 2019