Chungho Yu

According to our database, Chungho Yu authored at least 2 papers between 2018 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

30.1 A 28Gb/mm²4XX-Layer 1Tb 3b/Cell WF-Bonding 3D-NAND Flash with 5.6Gb/s/Pin IOs.

Sang-Soo Park, Jaedoeg Lyu, Myungjun Kim, Jaeyun Lee, Youngsun Song, Chungho Yu, Makoto Hirano, Yongseok Kwon, Jonghoon Park, Hojoon Kim, Daein Lee, Donghyun Seo, Byungrok Go, Seoyoon Jeon, Yoonjee Kim, Doo-Hyun Kim, Youngmin Jo, Hyun-Jun Yoon, Junehong Park, In-Mo Kim, Sunghoon Kim, Hokil Lee, Je-Hyeon Yu, Sanglok Kim, Hwan-Seok Ku, Jungmin Seo, Jindo Byun, Seunghyeon Yun, Kyoungtae Kang, Seung-Beom Kim, Yohan Lee, Yongkyu Lee, Kyung-Hwa Kang, Hanjun Lee, YoungHwan Ryu, Hyundo Kim, Wontae Kim, Hyeongdo Choi, Juho Jeon, Ansoo Park, Raehyun Song, Jae-Hwan Kim, Jungsoo Kim, Hwaseok Lee, Mookyung Lee, Jae-Ick Son, Jiho Cho, Moosung Kim, Jae-Woo Im, Jongmin Park, Hyuckjoon Kwon, Youngdon Choi, Chiweon Yoon, Seungjae Lee, Kiwhan Song, Sunghoi Hur

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2018

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput.

Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-Min Joe, Joonsuc Jang, Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Hanjun Lee, Min-Seok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Hojoon Kim, Cheon An Lee, Chungho Yu, Young-Sun Min, Moosung Kim, Kyungmin Kim, Seunghyun Moon, Hyun-Jin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Ki-Tae Park, Kyehyun Kyung

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018