Joonsuc Jang

According to our database, Joonsuc Jang authored at least 5 papers between 2012 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate.

Wontaeck Jung, Hyunggon Kim, Do-Bin Kim, Tae-Hyun Kim, Nam-Hee Lee, Dongjin Shin, Minyoung Kim, Youngsik Rho, Hun-Jong Lee, Yujin Hyun, Jaeyoung Park, Taekyung Kim, Hwiwon Kim, Gyeongwon Lee, Jisang Lee, Joonsuc Jang, Jungmin Park, Sion Kim, Su Chang Jeon, Suyong Kim, Jung-Ho Song, Min-Seok Kim, Taesung Lee, Byung-Kwan Chun, Tongsung Kim, Young Gyu Lee, Hokil Lee, Soowoong Lee, Hwaseok Lee, Dooho Cho, Sangwan Nam, Yeomyung Kim, Kunyong Yoon, Yoonjae Lee, Sunghoon Kim, Jungseok Hwang, Raehyun Song, Hyunsik Jang, Jae-Ick Son, Hongsoo Jeon, Myunghun Lee, Mookyung Lee, Kisung Kim, Eungsuk Lee, Myeong-Woo Lee, Sungkyu Jo, Chan Ho Kim, Jong Chul Park, Kyunghwa Yun, Soonock Seol, Ji-Ho Cho, Seungjae Lee, Jin-Yub Lee, SungHoi Hur

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2022

A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface.

Moosung Kim, Sung-Won Yun, Jungjune Park, Hyun Kook Park, Jungyu Lee, Yeong Seon Kim, Dae-Hoon Na, Sara Choi, Youngsun Song, Jonghoon Lee, Hyun-Jun Yoon, Kangbin Lee, Byunghoon Jeong, Sanglok Kim, Junhong Park, Cheon An Lee, Jaeyun Lee, Ji-Sang Lee, Jin Young Chun, Joonsuc Jang, Younghwi Yang, Seung Hyun Moon, Myung-Hoon Choi, Wontae Kim, Jungsoo Kim, Seok-Min Yoon, Pansuk Kwak, Myunghun Lee, Raehyun Song, Sunghoon Kim, Chiweon Yoon, Dongku Kang, Jin-Yub Lee, Jai Hyuk Song

Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2020

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.

Doo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, Jongeun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Hanjun Lee, Donghyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seung Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung-Hwan Choi, Sangjoon Hwang, Jaeheon Jeong

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2018

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput.

Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-Min Joe, Joonsuc Jang, Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Hanjun Lee, Min-Seok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Hojoon Kim, Cheon An Lee, Chungho Yu, Young-Sun Min, Moosung Kim, Kyungmin Kim, Seunghyun Moon, Hyun-Jin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Ki-Tae Park, Kyehyun Kyung

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2012

A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology.

Daeyeal Lee, Ik Joon Chang, Sangyong Yoon, Joonsuc Jang, Dong-Su Jang, Wook-Ghee Hahn, Jong-Yeol Park, Doo-Gon Kim, Chiweon Yoon, Bong-Soon Lim, ByungJun Min, Sung-Won Yun, Ji-Sang Lee, Il-Han Park, Kyung-Ryun Kim, Jeong-Yun Yun, Youse Kim, Yong-Sung Cho, Kyung-Min Kang, Sang-Hyun Joo, Jin-Young Chun, Jung-No Im, Seunghyuk Kwon, Seokjun Ham, Ansoo Park, Jae-Duk Yu, Nam-Hee Lee, Tae-Sung Lee, Moosung Kim, Hoosung Kim, Ki-Whan Song, Byung-Gil Jeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012