Young-Sun Min

According to our database¹, Young-Sun Min authored at least 8 papers between 2015 and 2019.

Collaborative distances:

Dijkstra number² of five.
Erdős number³ of four.

Timeline

Legend:

Book

In proceedings

Article

PhD thesis

Dataset

Other

Links

On csauthors.net:

Bibliography

2019

Variation-Tolerant WL Driving Scheme for High-Capacity NAND Flash Memory.

[BibT_eX]

[DOI]

IEEE Trans. Very Large Scale Integr. Syst., 2019

A 512Gb 3-bit/Cell 3D 6<sup>th</sup>-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput.

[BibT_eX]

[DOI]

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2017

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.

[BibT_eX]

[DOI]

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.

[BibT_eX]

[DOI]

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

WL under-driving scheme with decremental step voltage and incremental step time for high-capacity NAND flash memory.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Symposium on Circuits and Systems, 2016

2015

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

Young-Sun Min

Timeline

Legend:

Links

On csauthors.net:

Bibliography

Loading...