Dae-Seok Byeon

Affiliations:

Samsung, Seoul, South Korea

According to our database¹, Dae-Seok Byeon authored at least 19 papers between 2002 and 2022.

Collaborative distances:

Dijkstra number² of four.
Erdős number³ of four.

Timeline

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In proceedings

Article

PhD thesis

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Links

On csauthors.net:

Bibliography

2022

Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory.

[BibT_eX]

[DOI]

Proceedings of the International Conference on Electronics, Information, and Communication, 2022

2021

A 1.8-Gb/s/Pin 16-Tb NAND Flash Memory Multi-Chip Package With F-Chip for High-Performance and High-Capacity Storage.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2021

A 512Gb 3b/Cell 7<sup>th</sup> -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid-State Circuits Conference, 2021

2020

A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems.

[BibT_eX]

[DOI]

Proceedings of the IEEE Symposium on VLSI Circuits, 2020

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.

[BibT_eX]

[DOI]

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2019

A 512Gb 3-bit/Cell 3D 6<sup>th</sup>-Generation V-NAND Flash Memory with 82MB/s Write Throughput and 1.2Gb/s Interface.

[BibT_eX]

[DOI]

Proceedings of the IEEE International Solid- State Circuits Conference, 2019

2018

A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2018

A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput.

[BibT_eX]

[DOI]

Proceedings of the 2018 IEEE International Solid-State Circuits Conference, 2018

2017

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2017

11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory.

[BibT_eX]

[DOI]

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2016

A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2016

7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate.

[BibT_eX]

[DOI]

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.

[BibT_eX]

[DOI]

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2015

7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate.

[BibT_eX]

[DOI]

Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

2014

19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming.

[BibT_eX]

[DOI]

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2003

A 90-nm CMOS 1.8-V 2-Gb NAND flash memory for mass storage applications.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2003

2002

High-performance 1-Gb-NAND flash memory with 0.12-μm technology.

[BibT_eX]

[DOI]

IEEE J. Solid State Circuits, 2002

Dae-Seok Byeon

Timeline

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