Joel Molina Reyes
Orcid: 0000-0002-5681-1713Affiliations:
- Instituto Nacional de Astrofisica Optica y Electronica, Optics and Electronics, Puebla, Mexico
According to our database1,
Joel Molina Reyes
authored at least 10 papers
between 2005 and 2019.
Collaborative distances:
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Bibliography
2019
Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms.
Proceedings of the IEEE International Reliability Physics Symposium, 2019
2018
Room temperature resonant tunneling in metal-insulator-insulator-insulator-semiconductor devices.
Proceedings of the 76th Device Research Conference, 2018
2017
Understanding the Resistive Switching Phenomena of Stacked Al/Al<sub>2</sub>O<sub>3</sub>/Al Thin Films from the Dynamics of Conductive Filaments.
Complex., 2017
2016
Analysis of quantum conductance, read disturb and switching statistics in HfO<sub>2</sub> RRAM using conductive AFM.
Microelectron. Reliab., 2016
2015
Proceedings of the IEEE 58th International Midwest Symposium on Circuits and Systems, 2015
2014
Influence of the surface roughness of the bottom electrode on the resistive-switching characteristics of Al/Al<sub>2</sub>O<sub>3</sub>/Al and Al/Al<sub>2</sub>O<sub>3</sub>/W structures fabricated on glass at 300 °C.
Microelectron. Reliab., 2014
Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs.
Proceedings of the 44th European Solid State Device Research Conference, 2014
2013
Effect of changing the material and device's properties on the performance of polysilicon-based MicroActuators.
Proceedings of the 10th International Conference on Electrical Engineering, 2013
2007
Carrier separation and Vth measurements of W-La<sub>2</sub>O<sub>3</sub> gated MOSFET structures after electrical stress.
IEICE Electron. Express, 2007
2005
Degradation of high-K LA<sub>2</sub>O<sub>3</sub> gate dielectrics using progressive electrical stress.
Microelectron. Reliab., 2005