Hyodong Ban

According to our database1, Hyodong Ban authored at least 10 papers between 2022 and 2025.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2025
A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration.
IEEE J. Solid State Circuits, January, 2025

Study on the Measurement Method of Interface Resistance in HBM-DRAM: Novel Monitoring Method for Bump Contact Resistance.
Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Interface Engineering of Trench-Ox for Modern DRAM Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ.
IEEE J. Solid State Circuits, 2023

14nm DRAM Development and Manufacturing.
Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Investigation on NBTI Control Techniques of HKMG Transistors for Low-power DRAM applications.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Analysis of Intermittent Single-bit Failure on 10-nm node generation DRAM Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

Enhanced DRAM Single Bit Characteristics from Process Control of Chlorine.
Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022


  Loading...