Hanna Park

According to our database, Hanna Park authored at least 6 papers between 2011 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration.

Sung-Yong Cho, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sang-Hoon Kim, Daewoong Lee, Seongyeal Yang, Se-Mi Kim, Gil-Young Kang, Juseop Park, Kyung-Ho Lee, Hwan-Chul Jung, Gun-hee Cho, Chan-Yong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sang-Yong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hongjun Jin, YoungSeok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, TaeHoon Park, Changsik Yoo, Tae-Young Oh, SangJoon Hwang

IEEE J. Solid State Circuits, January, 2025

Impact of an Evidence-Based Large Language Model (LLM) Diagnostic Decision Support System: A Randomised Controlled Trial.

Sangah Ahn, Joongheum Park, Sujeong Hur, Kwangyul Jung, Jae-Ho Lee, Sae Won Choi, Meong Hi Son, Min-Jeoung Kang, Youn-Jung Kim, Hanna Park, Won Chul Cha, Junsang Yoo

Proceedings of the MEDINFO 2025 - Healthcare Smart × Medicine Deep, 2025

2024

13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration.

Sung-Yong Cho, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sanghoon Kim, Daewoong Lee, Seongyeal Yang, Gil-Young Kang, Juseop Park, Kyungho Lee, Hwan-Chul Jung, Gun-hee Cho, Chanyong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sangyong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hongjun Jin, YoungSeok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, TaeHoon Park, Tae-Young Oh, Changsik Yoo, SangJoon Hwang

Proceedings of the IEEE International Solid-State Circuits Conference, 2024

2017

23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme.

Chang-Kyo Lee, Yoon-Joo Eom, Jin-Hee Park, Junha Lee, Hye-Ran Kim, Kihan Kim, Young Choi, Ho-Jun Chang, Jonghyuk Kim, Jong-Min Bang, Seungjun Shin, Hanna Park, Su-Jin Park, Young-Ryeol Choi, Hoon Lee, Kyong-Ho Jeon, Jae-Young Lee, Hyo-Joo Ahn, Kyoung-Ho Kim, Jung-Sik Kim, Soobong Chang, Hyong-Ryol Hwang, Duyeul Kim, Yoon-Hwan Yoon, Seok-Hun Hyun, Joon-Young Park, Yoon-Gyu Song, Youn-Sik Park, Hyuck-Joon Kwon, Seung-Jun Bae, Tae-Young Oh, Indal Song, Yong-Cheol Bae, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2012

A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.

Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Joo-Sun Choi, Young-Hyun Jun

IEEE J. Solid State Circuits, 2012

2011

A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking.

Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun

Proceedings of the IEEE International Solid-State Circuits Conference, 2011