Iwao Kunishima

According to our database, Iwao Kunishima authored at least 12 papers between 1998 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of five.

2025

Dynamic Flash Memory Operation Experimentally Validated with 65nm SOI Technology.

Koji Sakui, Daniele Garbin, Yoshihisa Iwata, Gautam Gaddemane, Yisuo Li, Yiqun Wan, Ken'ichi Kanazawa, Eyup Can Demir, Iwao Kunishima, Andrea Fantini, Masakazu Kakumu, Christophe Lorant, Nozomu Harada

Proceedings of the IEEE International Memory Workshop, 2025

2011

A Scalable Shield-Bitline-Overdrive Technique for Sub-1.5 V Chain FeRAMs.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

IEEE J. Solid State Circuits, 2011

2010

A 64-Mb Chain FeRAM With Quad BL Architecture and 200 MB/s Burst Mode.

Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii

IEEE Trans. Very Large Scale Integr. Syst., 2010

A 1.6 GB/s DDR2 128 Mb Chain FeRAM With Scalable Octal Bitline and Sensing Schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

IEEE J. Solid State Circuits, 2010

A scalable shield-bitline-overdrive technique for 1.3V Chain FeRAM.

Daisaburo Takashima, Hidehiro Shiga, Daisuke Hashimoto, Tadashi Miyakawa, Shinichiro Shiratake, Katsuhiko Hoya, Ryu Ogiwara, Ryosuke Takizawa, Ryosuke Doumae, Ryo Fukuda, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Susumu Shuto, Koji Yamakawa, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama

Proceedings of the IEEE International Solid-State Circuits Conference, 2010

2009

A 1.6GB/s DDR2 128Mb chain FeRAM with scalable octal bitline and sensing schemes.

Hidehiro Shiga, Daisaburo Takashima, Shinichiro Shiratake, Katsuhiko Hoya, Tadashi Miyakawa, Ryu Ogiwara, Ryo Fukuda, Ryosuke Takizawa, Kosuke Hatsuda, Fumiyoshi Matsuoka, Yasushi Nagadomi, Daisuke Hashimoto, Hisaaki Nishimura, Takeshi Hioka, Sumiko M. Doumae, Shoichi Shimizu, Mitsumo Kawano, Toyoki Taguchi, Yohji Watanabe, Shuso Fujii, Tohru Ozaki, Hiroyuki Kanaya, Yoshinori Kumura, Yoshiro Shimojo, Yuki Yamada, Yoshihiro Minami, Susumu Shuto, Koji Yamakawa, Soichi Yamazaki, Iwao Kunishima, Takeshi Hamamoto, Akihiro Nitayama, Tohru Furuyama

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2006

A 64Mb Chain FeRAM with Quad-BL Architecture and 200MB/s Burst Mode.

Katsuhiko Hoya, Daisaburo Takashima, Shinichiro Shiratake, Ryu Ogiwara, Tadashi Miyakawa, Hidehiro Shiga, Sumiko M. Doumae, Sumito Ohtsuki, Yoshinori Kumura, Susumu Shuto, Tohru Ozaki, Koji Yamakawa, Iwao Kunishima, Akihiro Nitayama, Shuso Fujii

Proceedings of the 2006 IEEE International Solid State Circuits Conference, 2006

2003

A 32-Mb chain FeRAM with segment/stitch array architecture.

Shinichiro Shiratake, Tadashi Miyakawa, Yoshiaki Takeuchi, Ryu Ogiwara, Masahiro Kamoshida, Katsuhiko Hoya, Kohei Oikawa, Tohru Ozaki, Iwao Kunishima, Koji Yamakawa, Shigeki Sugimoto, Daisaburo Takashima, Hans-Oliver Joachim, Norbert Rehm, Joerg Wohlfahrt, Nicolas Nagel, Gerhard Beitel, Michael Jacob, Thomas Roehr

IEEE J. Solid State Circuits, 2003

2001

A 76-mm² 8-Mb chain ferroelectric memory.

Daisaburo Takashima, Yoshiaki Takeuchi, Tadashi Miyakawa, Yasuo Itoh, Ryu Ogiwara, Masahiro Kamoshida, Katsuhiko Hoya, Sumiko Mano Doumae, Tohru Ozaki, Hiroyuki Kanaya, Koji Yamakawa, Iwao Kunishima, Yukihito Oowaki

IEEE J. Solid State Circuits, 2001

2000

A 0.5-μm, 3-V 1T1C, 1-Mbit FRAM with a variable reference bit-line voltage scheme using a fatigue-free reference capacitor.

Ryu Ogiwara, Sumio Tanaka, Yasuo Itoh, Tadashi Miyakawa, Yoshiaki Takeuchi, Sumiko Mano Doumae, Hiroyuki Takenaka, Iwao Kunishima, Susumu Shuto, Osamu Hidaka, Sumito Ohtsuki, Shin'ichi Tanaka

IEEE J. Solid State Circuits, 2000

1999

A sub-40-ns chain FRAM architecture with 7-ns cell-plate-line drive.

Daisaburo Takashima, Susumu Shuto, Iwao Kunishima, Hiroyuki Takenaka, Yukihito Oowaki, Shin'ichi Tanaka

IEEE J. Solid State Circuits, 1999

1998

High-density chain ferroelectric random access memory (chain FRAM).

Daisaburo Takashima, Iwao Kunishima

IEEE J. Solid State Circuits, 1998