Khandker Akif Aabrar

According to our database, Khandker Akif Aabrar authored at least 10 papers between 2019 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Analog In-Memory-Compute with Multi-bit Silicon Ferro FinFET Array for Improved Energy and Area Efficiency.

Eknath Sarkar, Dyutimoy Chakraborty, Wei-Chun Wang, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Omkar Phadke, Chengyang Zhang, Emmanuel Quezada, Jaewon Shin, Shida Zhang, Asif Islam Khan, Shimeng Yu, Saibal Mukhopadhyay, Suman Datta

Proceedings of the IEEE International Memory Workshop, 2025

2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.

Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni

CoRR, 2024

Demonstration of On-Chip Switched-Capacitor DC-DC Converters using BEOL Compatible Oxide Power Transistors and Superlattice MIM Capacitors.

Sunbin Deng, Jungyoun Kwak, Junmo Lee, Dyutimoy Chakraborty, Jaewon Shin, Omkar Phadke, Sharadindu Gopal Kirtania, Chengyang Zhang, Khandker Akif Aabrar, Shimeng Yu, Suman Datta

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Amorphous Oxide Semiconductors for Monolithic 3D Integrated Circuits.

Suman Datta, Eknath Sarkar, Khandker Akif Aabrar, Shan Deng, Jaewon Shin, Arijit Raychowdhury, Shimeng Yu, Asif Khan

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

On the Reliability of High-Performance Dual Gate (DG) W-Doped In2O3 FET.

Khandker Akif Aabrar, Hyeonwoo Park, Sharadindu Gopal Kirtania, Eknath Sarkar, Md Abdullah Al Mamun, Sunbin Deng, Chengyang Zhang, Gilbert B. Rayner, Kyeongjae Cho, Suman Datta

Proceedings of the IEEE Symposium on VLSI Technology and Circuits 2024, 2024

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions.

Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Taeyoung Song, Sharadindu Gopal Kirtania, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Shimeng Yu, Ahmad Ehtesham Islam, Suman Datta, Souvik Mahapatra, Asif Islam Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2023

Cold-FeFET as Embedded Non-Volatile Memory with Unlimited Cycling Endurance.

Sharadindu Gopal Kirtania, Khandker Akif Aabrar, Asif Islam Khan, Shimeng Yu, Samyak Datta

Proceedings of the 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023

Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors.

Omkar Phadke, Khandker Akif Aabrar, Yuan-chun Luo, Sharadindu Gopal Kirtania, Asif Islam Khan, Suman Datta, Shimeng Yu

Proceedings of the IEEE International Reliability Physics Symposium, 2023

2022

A Thousand State Superlattice(SL) FEFET Analog Weight Cell.

Khandker Akif Aabrar, Sharadindu Gopal Kirtania, A. Lu, A. Khanna, Wriddhi Chakraborty, M. San Jose, Shimeng Yu, Suman Datta

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2019

Modeling layout, distribution and breakdown effects in GaN HEMTs in the MVSG approach.

Khandker Akif Aabrar, Lan Wei, Ujwal Radhakrishna

Proceedings of the 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019