Zhouhang Jiang

According to our database, Zhouhang Jiang authored at least 7 papers between 2022 and 2024.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2024

Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate.

Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni

CoRR, 2024

2023

Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning.

Bibhas Manna, Arnob Saha, Zhouhang Jiang, Kai Ni, Abhronil Sengupta

CoRR, 2023

A Ferroelectric Compute-in-Memory Annealer for Combinatorial Optimization Problems.

Xunzhao Yin, Yu Qian, Alptekin Vardar, Marcel Gunther, Franz Müller, Nellie Laleni, Zijian Zhao, Zhouhang Jiang, Zhiguo Shi, Yiyu Shi, Xiao Gong, Cheng Zhuo, Thomas Kämpfe, Kai Ni

CoRR, 2023

Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET.

Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed, Rajiv V. Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni

CoRR, 2023

2022

Hybrid Stochastic Synapses Enabled by Scaled Ferroelectric Field-effect Transistors.

A. N. M. Nafiul Islam, Arnob Saha, Zhouhang Jiang, Kai Ni, Abhronil Sengupta

CoRR, 2022

A Homogeneous Processing Fabric for Matrix-Vector Multiplication and Associative Search Using Ferroelectric Time-Domain Compute-in-Memory.

Xunzhao Yin, Qingrong Huang, Franz Müller, Shan Deng, Alptekin Vardar, Sourav De, Zhouhang Jiang, Mohsen Imani, Cheng Zhuo, Thomas Kämpfe, Kai Ni

CoRR, 2022

Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window.

Zhouhang Jiang, Yi Xiao, Swetaki Chatterjee, Halid Mulaosmanovic, Stefan Dünkel, Steven Soss, Sven Beyer, Rajiv V. Joshi, Yogesh Singh Chauhan, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022