Masahide Matsumoto

According to our database, Masahide Matsumoto authored at least 4 papers between 2009 and 2017.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2017

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology.

Ryuji Yamashita, Sagar Magia, Tsutomu Higuchi, Kazuhide Yoneya, Toshio Yamamura, Hiroyuki Mizukoshi, Shingo Zaitsu, Minoru Yamashita, Shunichi Toyama, Norihiro Kamae, Juan Lee, Shuo Chen, Jiawei Tao, William Mak, Xiaohua Zhang, Ying Yu, Yuko Utsunomiya, Yosuke Kato, Manabu Sakai, Masahide Matsumoto, Hardwell Chibvongodze, Naoki Ookuma, Hiroki Yabe, Subodh Taigor, Rangarao Samineni, Takuyo Kodama, Yoshihiko Kamata, Yuzuru Namai, Jonathan Huynh, Sung-En Wang, Yankang He, Trung Pham, Vivek Saraf, Akshay Petkar, Mitsuyuki Watanabe, Koichiro Hayashi, Prashant Swarnkar, Hitoshi Miwa, Aditya Pradhan, Sulagna Dey, Debasish Dwibedy, Thushara Xavier, Muralikrishna Balaga, Samiksha Agarwal, Swaroop Kulkarni, Zameer Papasaheb, Sahil Deora, Patrick Hong, Meiling Wei, Gopinath Balakrishnan, Takuya Ariki, Kapil Verma, Chang Hua Siau, Yingda Dong, Ching-Huang Lu, Toru Miwa, Farookh Moogat

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2014

A 130.7-mm² 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology.

Tz-Yi Liu, Tian Hong Yan, Roy Scheuerlein, Yingchang Chen, Jeffrey KoonYee Lee, Gopinath Balakrishnan, Gordon Yee, Henry Zhang, Alex Yap, Jingwen Ouyang, Takahiko Sasaki, Ali Al-Shamma, Chin-Yu Chen, Mayank Gupta, Greg Hilton, Achal Kathuria, Vincent Lai, Masahide Matsumoto, Anurag Nigam, Anil Pai, Jayesh Pakhale, Chang Hua Siau, Xiaoxia Wu, Yibo Yin, Nicolas Nagel, Yoichiro Tanaka, Masaaki Higashitani, Tim Minvielle, Chandu Gorla, Takayuki Tsukamoto, Takeshi Yamaguchi, Mutsumi Okajima, Takayuki Okamura, Satoru Takase, Hirofumi Inoue, Luca Fasoli

IEEE J. Solid State Circuits, 2014

2013

A 130.7mm² 2-layer 32Gb ReRAM memory device in 24nm technology.

Tz-Yi Liu, Tian Hong Yan, Roy Scheuerlein, Yingchang Chen, Jeffrey KoonYee Lee, Gopinath Balakrishnan, Gordon Yee, Henry Zhang, Alex Yap, Jingwen Ouyang, Takahiko Sasaki, Sravanti Addepalli, Ali Al-Shamma, Chin-Yu Chen, Mayank Gupta, Greg Hilton, Saurabh Joshi, Achal Kathuria, Vincent Lai, Deep Masiwal, Masahide Matsumoto, Anurag Nigam, Anil Pai, Jayesh Pakhale, Chang Hua Siau, Xiaoxia Wu, Ronald Yin, Liping Peng, Jang Yong Kang, Sharon Huynh, Huijuan Wang, Nicolas Nagel, Yoichiro Tanaka, Masaaki Higashitani, Tim Minvielle, Chandu Gorla, Takayuki Tsukamoto, Takeshi Yamaguchi, Mutsumi Okajima, Takayuki Okamura, Satoru Takase, Takahiko Hara, Hirofumi Inoue, Luca Fasoli, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader

Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

2009

A 113mm2 32Gb 3b/cell NAND flash memory.

Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Teruhiko Kamei, Hiroaki Nasu, Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko, Masahide Matsumoto, Toshihiko Himeno, Toshifumi Hashimoto, Yi-Ching Liu, Hardwell Chibvongodze, Takamitsu Hori, Manabu Sakai, Hong Ding, Yoshiharu Takeuchi, Hitoshi Shiga, Norifumi Kajimura, Yasuyuki Kajitani, Kiyofumi Sakurai, Kosuke Yanagidaira, Toshihiro Suzuki, Yuko Namiki, Tomofumi Fujimura, Man Mui, Hao Nguyen, Seungpil Lee, Alex Mak, Jeffery Lutze, Tooru Maruyama, Toshiharu Watanabe, Takahiko Hara, Shigeo Ohshima

Proceedings of the IEEE International Solid-State Circuits Conference, 2009