Farookh Moogat

According to our database, Farookh Moogat authored at least 8 papers between 2008 and 2023.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2023

A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface.

Jonghak Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V, V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe

IEEE J. Solid State Circuits, 2023

2022

A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface.

Jong Yuh, Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K. V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe

Proceedings of the IEEE International Solid-State Circuits Conference, 2022

2017

11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology.

Ryuji Yamashita, Sagar Magia, Tsutomu Higuchi, Kazuhide Yoneya, Toshio Yamamura, Hiroyuki Mizukoshi, Shingo Zaitsu, Minoru Yamashita, Shunichi Toyama, Norihiro Kamae, Juan Lee, Shuo Chen, Jiawei Tao, William Mak, Xiaohua Zhang, Ying Yu, Yuko Utsunomiya, Yosuke Kato, Manabu Sakai, Masahide Matsumoto, Hardwell Chibvongodze, Naoki Ookuma, Hiroki Yabe, Subodh Taigor, Rangarao Samineni, Takuyo Kodama, Yoshihiko Kamata, Yuzuru Namai, Jonathan Huynh, Sung-En Wang, Yankang He, Trung Pham, Vivek Saraf, Akshay Petkar, Mitsuyuki Watanabe, Koichiro Hayashi, Prashant Swarnkar, Hitoshi Miwa, Aditya Pradhan, Sulagna Dey, Debasish Dwibedy, Thushara Xavier, Muralikrishna Balaga, Samiksha Agarwal, Swaroop Kulkarni, Zameer Papasaheb, Sahil Deora, Patrick Hong, Meiling Wei, Gopinath Balakrishnan, Takuya Ariki, Kapil Verma, Chang Hua Siau, Yingda Dong, Ching-Huang Lu, Toru Miwa, Farookh Moogat

Proceedings of the 2017 IEEE International Solid-State Circuits Conference, 2017

2012

A 19nm 112.8mm² 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface.

Noboru Shibata, Kazushige Kanda, Toshiki Hisada, Katsuaki Isobe, Manabu Sato, Yui Shimizu, Takahiro Shimizu, Takahiro Sugimoto, Tomohiro Kobayashi, Kazuko Inuzuka, Naoaki Kanagawa, Yasuyuki Kajitani, Takeshi Ogawa, J. Nakai, Kiyoaki Iwasa, Masatsugu Kojima, Toshihiro Suzuki, Yuya Suzuki, Shintaro Sakai, Tomofumi Fujimura, Yuko Utsunomiya, Toshifumi Hashimoto, Makoto Miakashi, Naoki Kobayashi, M. Inagaki, Yuuki Matsumoto, Satoshi Inoue, Yoshinao Suzuki, D. He, Yasuhiko Honda, Junji Musha, Masaki Nakagawa, Mitsuaki Honma, Naofumi Abiko, Mitsumasa Koyanagi, Masahiro Yoshihara, Kazumi Ino, Mitsuhiro Noguchi, Teruhiko Kamei, Yosuke Kato, Shingo Zaitsu, Hiroaki Nasu, Takuya Ariki, Hardwell Chibvongodze, Mitsuyuki Watanabe, Hong Ding, Naoki Ookuma, Ryuji Yamashita, G. Liang, Gertjan Hemink, Farookh Moogat, Cuong Trinh, Masaaki Higashitani, Tuan Pham, Kousuke Kanazawa

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.

Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Teruhiko Kamei, Masaaki Higashitani, Tuan Pham, Mitsuaki Honma, Yoshihisa Watanabe, Kazumi Ino, Binh Le, Byungki Woo, Khin Htoo, Taiyuan Tseng, Long Pham, Frank Tsai, Kwang-Ho Kim, Yi-Chieh Chen, Min She, Jonghak Yuh, Alex Chu, Chen Chen, Ruchi Puri, Hung-Szu Lin, Yi-Fang Chen, William Mak, Jonathan Huynh, Jim Chan, Mitsuyuki Watanabe, Daniel Yang, Grishma Shah, Pavithra Souriraj, Dinesh Tadepalli, Tenugu Suman, Ray Gao, Viski Popuri, Behdad Azarbayjani, Ravindra Madpur, James Lan, Emilio Yero, Feng Pan, Patrick Hong, Jang Yong Kang, Farookh Moogat, Yupin Fong, Raul Cernea, Sharon Huynh, Cuong Trinh, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012

2009

A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology.

Raul Cernea, Long Pham, Farookh Moogat, Siu Lung Chan, Binh Le, Yan Li, Shouchang Tsao, Taiyuan Tseng, Khanh Nguyen, Jason Li, Jayson Hu, Jonghak Yuh, Cynthia Hsu, Fanglin Zhang, Teruhiko Kamei, Hiroaki Nasu, Phil Kliza, Khin Htoo, Jeffrey Lutze, Yingda Dong, Masaaki Higashitani, Junhui Yang, Hung-Szu Lin, Vamshi Sakhamuri, Alan Li, Feng Pan, Sridhar Yadala, Subodh Taigor, Kishan Pradhan, James Lan, Jim Chan, Takumi Abe, Yasuyuki Fukuda, Hideo Mukai, Koichi Kawakami, Connie Liang, Tommy Ip, Shu-Fen Chang, Jaggi Lakshmipathi, Sharon Huynh, Dimitris Pantelakis, Mehrdad Mofidi, Khandker Quader

IEEE J. Solid State Circuits, 2009

A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS.

Cuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, Kazunori Kanebako, Susumu Yoshikawa, W. Igarashi, Atsushi Inoue, T. Takahashi, Yukio Komatsu, C. Suzuki, Kousuke Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, Mark Murin, Mark Shlick, Menahem Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader

Proceedings of the IEEE International Solid-State Circuits Conference, 2009

2008

A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm.

Raul Cernea, Long Pham, Farookh Moogat, Siu Lung Chan, Binh Le, Yan Li, Shouchang Tsao, Taiyuan Tseng, Khanh Nguyen, Jason Li, Jayson Hu, Jong Park, Cynthia Hsu, Fanglin Zhang, Teruhiko Kamei, Hiroaki Nasu, Phil Kliza, Khin Htoo, Jeffery Lutze, Yingda Dong, Masaaki Higashitani, Junhui Yang, Hung-Szu Lin, Vamshi Sakhamuri, Alan Li, Feng Pan, Sridhar Yadala, Subodh Taigor, Kishan Pradhan, James Lan, Jim Chan, Takumi Abe, Yasuyuki Fukuda, Hideo Mukai, Koichi Kawakami, Connie Liang, Tommy Ip, Shu-Fen Chang, Jaggi Lakshmipathi, Sharon Huynh, Dimitris Pantelakis, Mehrdad Mofidi, Khandker Quader

Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008