Michael Otto

Affiliations:
  • Module One LLC & Co. KG, GlobalFoundries Dresden, Dresden, Germany


According to our database1, Michael Otto authored at least 9 papers between 2017 and 2022.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

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Links

On csauthors.net:

Bibliography

2022
Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance.
Proceedings of the IEEE International Reliability Physics Symposium, 2022

Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2021
Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices.
Proceedings of the IEEE International Reliability Physics Symposium, 2021

Novel embedded single poly floating gate flash demonstrated in 22nm FDSOI technology.
Proceedings of the IEEE International Memory Workshop, 2021

2019
Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias.
Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018
Analysis of 28 nm SRAM cell stability under mechanical load applied by nanoindentation.
Proceedings of the IEEE International Reliability Physics Symposium, 2018

Prediction of SRAM Reliability Under Mechanical Stress Induced by Harsh En§ironments.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

RTN and LFN Noise Performance in Advanced FDSOI Technology.
Proceedings of the 48th European Solid-State Device Research Conference, 2018

2017
A low power 4-GHz DCO with fine resolution and wide tuning range in 22 nm FDSOI CMOS technology.
Proceedings of the 2017 IEEE Radio and Wireless Symposium, 2017


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