Nam-Hyun Lee

According to our database, Nam-Hyun Lee authored at least 14 papers between 2016 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

Analysis of Bias Temperature Instability in Peripheral CMOS Devices for Low-Temperature Memory Applications.

Jung Rae Cho, Seungwon Go, Jingyu Park, Tae Jun Yang, Seonhaeng Lee, Namhyun Lee, Dong Keun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Sangwan Kim, Dae Hwan Kim

IEEE Access, 2025

Novel Linear Model for OFF-State Stress Causing Stand-By Current of Advanced VNAND Chip.

Hyuk Park, Gang-Jun Kim, Nam-Jae Kim, Jaeyeop Ahn, Taehun You, Y. Kang, M. Yoon, Seonhaeng Lee, Nam-Hyun Lee, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applications.

Gang-Jun Kim, Taehun You, Sewon Jeon, Seung Hwan Kwak, Hwangju Song, Shinhyung Kim, Nam-Jae Kim, Jaeyeop Ahn, Hyuk Park, Seonhaeng Lee, Nam-Hyun Lee, Young Hoon Cho, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2025

2024

Cryogenic Body Bias Effect in DRAM Peripheral and Buried-Channel-Array Transistor for Quantum Computing Applications.

Hyunseo You, Kihoon Nam, Jehyun An, Chanyang Park, Donghyun Kim, Seonhaeng Lee, Namhyun Lee, Rock-Hyun Baek

IEEE Access, 2024

Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning.

Jun Hui Park, Jung Nam Kim, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek, Dae Hwan Kim, Changhyun Kim, Myounggon Kang, Yoon Kim

IEEE Access, 2024

Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process Technology.

Sunhang Lee, Nam-Hyun Lee, Gang-Jun Kim, Jaeyeop Ahn, Ik-Hwan Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, Seungbum Ko, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2024

2022

Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology.

Nam-Hyun Lee, Sunhang Lee, S.-H. Kim, G.-J. Kim, K. W. Lee, Y. S. Lee, Y. C. Hwang, H. S. Kim, S. Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2022

2021

Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM.

Donghee Son, Gang-Jun Kim, Jongkyun Kim, Nam-Hyun Lee, Kijin Kim, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2021

The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress.

Gang-Jun Kim, Moonjee Yoon, SungHwan Kim, Myeongkyu Eo, Shinhyung Kim, Taehun You, Namhyun Lee, Kijin Kim, Sangwoo Pae

Proceedings of the IEEE International Reliability Physics Symposium, 2021

2019

Comprehensive Study for OFF-State Hot Carrier Degrdation of Scaled nMOSFETs in DRAM.

Nam-Hyun Lee, Jongkyun Kim, Donghee Son, Kangjun Kim, Jung Eun Seok

Proceedings of the IEEE International Reliability Physics Symposium, 2019

2018

Effect of DC/AC stress on the reliability of cell capacitor in DRAM.

Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee

Microelectron. Reliab., 2018

Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM.

Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee

Microelectron. Reliab., 2018

2016

Channel width dependence of AC stress on bulk nMOSFETs.

Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang

Microelectron. Reliab., 2016

Degradation of pMOSFETs due to hot electron induced punchthrough.

Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang

Microelectron. Reliab., 2016