Prasanna Venkatesan Ravindran

According to our database, Prasanna Venkatesan Ravindran authored at least 9 papers between 2019 and 2025.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2025

Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection Layers.

Minji Shon, Chinsung Park, Prasanna Venkatesan Ravindran, Lance Fernandes, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Suman Datta, Asif Khan, Shimeng Yu

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year Retention.

Prasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, Taeyoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE Traps.

Priyankka Gundlapudi Ravikumar, Andrea Padovani, Prasanna Venkatesan Ravindran, Chinsung Park, Nashrah Afroze, Mengkun Tian, Suman Datta, Shimeng Yu, Luca Larcher, Gaurav Thareja, Asif Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved Endurance.

Andrea Padovani, Nashrah Afroze, Yu-Hsin Kuo, Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Mengkun Tian, Asif Khan, Jihoon Choi, Jun Hee Lee, Luca Larcher, Gaurav Thareja

Proceedings of the IEEE International Reliability Physics Symposium, 2025

Comparative Study of Channel Materials for Ferroelectric NAND Applications.

Lance Fernandes, Prasanna Venkatesan Ravindran, Mengkun Tian, Yu-Hsin Kuo, Nashrah Afroze, Salma Soliman, Sanghyun Kang, Dyutimoy Chakraborty, Taeyoung Song, Chengyang Zhang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan

Proceedings of the IEEE International Memory Workshop, 2025

2024

Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress Conditions.

Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, Taeyoung Song, Sharadindu Gopal Kirtania, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Shimeng Yu, Ahmad Ehtesham Islam, Suman Datta, Souvik Mahapatra, Asif Islam Khan

Proceedings of the IEEE International Reliability Physics Symposium, 2024

Design Framework for Ferroelectric Gate Stack Engineering of Vertical NAND Structures for Efficient TLC and QLC Operation.

Dipjyoti Das, Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song, Chinsung Park, Nashrah Afroze, Mengkun Tian, Hang Chen, Winston Chem, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Islam Khan

Proceedings of the IEEE International Memory Workshop, 2024

2022

Machine Learning Assisted Statistical Variation Analysis of Ferroelectric Transistors: From Experimental Metrology to Predictive Modeling.

Gihun Choe, Prasanna Venkatesan Ravindran, Anni Lu, Jae Hur, Maximilian Lederer, André Reck, Sarah Lombardo, Nashrah Afroze, Josh Kacher, Asif Islam Khan, Shimeng Yu

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2019

Name Familiarity Detection using EEG-based Brain Computer Interface.

Prasanna Venkatesan Ravindran, A. Prasad Vinod

Proceedings of the TENCON 2019, 2019