Gyu-Hong Kim

According to our database, Gyu-Hong Kim authored at least 10 papers between 2005 and 2016.

Collaborative distances:

• Dijkstra number of four.
• Erdős number of four.

2016

Bitline Precharging and Preamplifying Switching pMOS for High-Speed Low-Power SRAM.

Hanwool Jeong, Juhyun Park, Tae Woo Oh, Woojin Rim, Taejoong Song, Gyu-Hong Kim, Hyo-Sig Won, Seong-Ook Jung

IEEE Trans. Circuits Syst. II Express Briefs, 2016

17.1 A 10nm FinFET 128Mb SRAM with assist adjustment system for power, performance, and area optimization.

Taejoong Song, Woojin Rim, Sunghyun Park, Yongho Kim, Jonghoon Jung, Giyong Yang, Sanghoon Baek, Jaeseung Choi, Bongjae Kwon, Yunwoo Lee, Sungbong Kim, Gyu-Hong Kim, Hyo-Sig Won, Ja-Hum Ku, Sunhom Steve Paak, E. S. Jung, Steve Sungho Park, Kinam Kim

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2015

Trip-Point Bit-Line Precharge Sensing Scheme for Single-Ended SRAM.

Hanwool Jeong, Taewon Kim, Taejoong Song, Gyu-Hong Kim, Seong-Ook Jung

IEEE Trans. Very Large Scale Integr. Syst., 2015

Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM.

Hanwool Jeong, Taewon Kim, Younghwi Yang, Taejoong Song, Gyu-Hong Kim, Hyo-Sig Won, Seong-Ook Jung

IEEE Trans. Circuits Syst. I Regul. Pap., 2015

Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM.

Hanwool Jeong, Taewon Kim, Kyoman Kang, Taejoong Song, Gyu-Hong Kim, Hyo-Sig Won, Seong-Ook Jung

IEEE Trans. Circuits Syst. I Regul. Pap., 2015

A 14 nm FinFET 128 Mb SRAM With V_MIN Enhancement Techniques for Low-Power Applications.

Taejoong Song, Woojin Rim, Jonghoon Jung, Giyong Yang, Jaeho Park, Sunghyun Park, Yongho Kim, Kang-Hyun Baek, Sanghoon Baek, Sang-Kyu Oh, Jinsuk Jung, Sungbong Kim, Gyu-Hong Kim, Jintae Kim, Young-Keun Lee, Sang-Pil Sim, Jong Shik Yoon, Kyu-Myung Choi, Hyo-Sig Won, Jaehong Park

IEEE J. Solid State Circuits, 2015

Robust via-programmable ROM design based on 45nm process considering process variation and enhancement Vmin and yield.

Byung-Jun Jang, Chan-Ho Lee, Sung-Hun Sim, Kyu-Won Choi, Do-Hun Byun, Yeon-Ho Jung, Ki-Man Park, Dong-Yeon Heo, Gyu-Hong Kim, Joon-Sung Yang

Proceedings of the 2015 IEEE International Symposium on Circuits and Systems, 2015

2014

13.2 A 14nm FinFET 128Mb 6T SRAM with VMIN-enhancement techniques for low-power applications.

Taejoong Song, Woojin Rim, Jonghoon Jung, Giyong Yang, Jaeho Park, Sunghyun Park, Kang-Hyun Baek, Sanghoon Baek, Sang-Kyu Oh, Jinsuk Jung, Sungbong Kim, Gyu-Hong Kim, Jintae Kim, Young-Keun Lee, Kee Sup Kim, Sang-Pil Sim, Jong Shik Yoon, Kyu-Myung Choi

Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

Pseudo NMOS based sense amplifier for high speed single-ended SRAM.

Hanwool Jeong, Taewon Kim, Seong-Ook Jung, Taejoong Song, Gyu-Hong Kim

Proceedings of the 21st IEEE International Conference on Electronics, Circuits and Systems, 2014

2005

A 130-nm 0.9-V 66-MHz 8-Mb (256K × 32) local SONOS embedded flash EEPROM.

Myoung-Kyu Seo, Soung-Hoon Sim, Myoung-Hee Oh, Hyo-Sang Lee, Sang-Won Kim, In-Wook Cho, Gyu-Hong Kim, Moon-Gone Kim

IEEE J. Solid State Circuits, 2005