Zhengsheng Han
Orcid: 0000-0002-4691-9683
According to our database1,
Zhengsheng Han
authored at least 15 papers
between 2011 and 2023.
Collaborative distances:
Collaborative distances:
Timeline
Legend:
Book In proceedings Article PhD thesis Dataset OtherLinks
On csauthors.net:
Bibliography
2023
Proceedings of the IEEE International Reliability Physics Symposium, 2023
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.
Proceedings of the IEEE International Reliability Physics Symposium, 2023
2022
2019
IEICE Electron. Express, 2019
IEICE Electron. Express, 2019
A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO<sub>2</sub> layer.
IEICE Electron. Express, 2019
Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique.
IEEE Access, 2019
A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region.
IEEE Access, 2019
Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.
Proceedings of the 13th IEEE International Conference on ASIC, 2019
2018
Microelectron. Reliab., 2018
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab., 2018
2017
IEICE Electron. Express, 2017
Proceedings of the International Conference on Dependable Systems and Their Applications, 2017
Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells.
Proceedings of the 12th IEEE International Conference on ASIC, 2017
2011
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011