Zhengsheng Han

According to our database1, Zhengsheng Han authored at least 12 papers between 2011 and 2019.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Other 

Links

On csauthors.net:

Bibliography

2019
Snapback-free base resistance controlled thyristor with floating N-region.
IEICE Electron. Express, 2019

A new snapback-free base resistance controlled thyristor with semi-superjunction.
IEICE Electron. Express, 2019

A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO<sub>2</sub> layer.
IEICE Electron. Express, 2019

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique.
IEEE Access, 2019

A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region.
IEEE Access, 2019

Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.
Proceedings of the 13th IEEE International Conference on ASIC, 2019

2018
Process variation dependence of total ionizing dose effects in bulk nFinFETs.
Microelectron. Reliab., 2018

Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab., 2018

2017
A RC-IGBT with built-in free wheeling diode controlled by MOSFET.
IEICE Electron. Express, 2017

System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure.
Proceedings of the International Conference on Dependable Systems and Their Applications, 2017

Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells.
Proceedings of the 12th IEEE International Conference on ASIC, 2017

2011
A new full current mode sense amplifier with compensation circuit.
Proceedings of the 2011 IEEE 9th International Conference on ASIC, 2011


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