Baudouin Martineau

Orcid: 0000-0002-5201-8523

According to our database1, Baudouin Martineau authored at least 23 papers between 2005 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
SamurAI: A Versatile IoT Node With Event-Driven Wake-Up and Embedded ML Acceleration.
IEEE J. Solid State Circuits, 2023

A compact bidirectional reconfigurable 2<sup>nd</sup>-order low-pass filter for 5G FR2 applications.
Proceedings of the 18th Conference on Ph.D Research in Microelectronics and Electronics, 2023

Design of a 37-40GHz bidirectional amplifier for 5G FR2 radio beamforming systems in 22nm CMOS FD-SOI.
Proceedings of the 30th IEEE International Conference on Electronics, Circuits and Systems, 2023

2022
Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies.
Proceedings of the 52nd IEEE European Solid-State Device Research Conference, 2022

2020
SamurAI: A 1.7MOPS-36GOPS Adaptive Versatile IoT Node with 15, 000× Peak-to-Idle Power Reduction, 207ns Wake-Up Time and 1.3TOPS/W ML Efficiency.
Proceedings of the IEEE Symposium on VLSI Circuits, 2020

2019
New Design Opportunities exploiting FDSOI technology for RF Power Amplifier and LNA design.
Proceedings of the 17th IEEE International New Circuits and Systems Conference, 2019

2018
A 12 Gb/s 64QAM and OFDM compatible millimeter-wave communication link using a novel plastic waveguide design.
Proceedings of the 2018 IEEE Radio and Wireless Symposium, 2018

Benefits of Joint Optimization of Tunable Wake-up Radio Architecture and Protocols.
Proceedings of the 25th IEEE International Conference on Electronics, Circuits and Systems, 2018

2015
2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dB and 74mW PDC.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

2014
A 1.2V 20 dBm 60 GHz power amplifier with 32.4 dB Gain and 20 % Peak PAE in 65nm CMOS.
Proceedings of the ESSCIRC 2014, 2014

2012
On the electrical properties of slotted metallic planes in CMOS processes for RF and millimeter-wave applications.
Microelectron. J., 2012

A 65nm CMOS 60 GHz class F-E power amplifier for WPAN applications.
Proceedings of the 25th Symposium on Integrated Circuits and Systems Design, 2012

A 60GHz class F-E power VCO with vector-modulator feedback in 65nm CMOS technology.
Proceedings of the 19th IEEE International Conference on Electronics, Circuits and Systems, 2012

2011
A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications.
IEEE J. Solid State Circuits, 2011

A 65nm CMOS fully integrated transceiver module for 60GHz wireless HD applications.
Proceedings of the IEEE International Solid-State Circuits Conference, 2011

A 20-23GHz Coupled Oscillators Array in 65nm CMOS for HDR 60GHz beamforming applications.
Proceedings of the 37th European Solid-State Circuits Conference, 2011

2010
A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI.
IEEE J. Solid State Circuits, 2010

A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010

A comparison between grounded and floating shield inductors for mmW VCOs.
Proceedings of the 36th European Solid-State Circuits Conference, 2010

2009
A 60GHz power amplifier with 14.5dBm saturation power and 25% peak PAE in CMOS 65nm SOI.
Proceedings of the 35th European Solid-State Circuits Conference, 2009

2007
80 GHz low noise amplifiers in 65nm CMOS SOI.
Proceedings of the 33rd European Solid-State Circuits Conference, 2007

Design for millimeter-wave applications in silicon technologies.
Proceedings of the 33rd European Solid-State Circuits Conference, 2007

2005
20 dBm CMOS class AB power amplifier design for low cost 2 GHz-2.45 GHz consumer applications in a 0.13µm technology.
Proceedings of the International Symposium on Circuits and Systems (ISCAS 2005), 2005


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