Chenghu Dai

According to our database, Chenghu Dai authored at least 7 papers between 2023 and 2024.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2024

Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies.

Licai Hao, Xinyi Zhang, Chenghu Dai, Qiang Zhao, Wenjuan Lu, Chunyu Peng, Yongliang Zhou, Zhiting Lin, Xiulong Wu

IEEE Trans. Very Large Scale Integr. Syst., April, 2024

Flip Point Offset-Compensation Sense Amplifier With Sensing-Margin-Enhancement for Dynamic Random-Access Memory.

Li Liu, Dele Tai, Bin Qiang, Lijun Guan, Chunyu Peng, Chenghu Dai, Licai Hao, Wenjuan Lu, Zhiting Lin, Qiang Zhao, Xiulong Wu

IEEE Trans. Circuits Syst. II Express Briefs, April, 2024

A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations.

Chenghu Dai, Zihua Ren, Lijun Guan, Haitao Liu, Mengya Gao, Wenjuan Lu, Zhiyong Pang, Chunyu Peng, Xiulong Wu

Microelectron. J., February, 2024

A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices.

Yongliang Zhou, Zixuan Zhou, Yiming Wei, Zhen Yang, Xiao Lin, Chenghu Dai, Licai Hao, Chunyu Peng, Hao Cai, Xiulong Wu

IEEE Trans. Circuits Syst. I Regul. Pap., January, 2024

2023

Design of radiation-hardened memory cell by polar design for space applications.

Licai Hao, Li Liu, Qi Shi, Bin Qiang, Zhengya Li, Nianlong Liu, Chenghu Dai, Qiang Zhao, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Xiulong Wu

Microelectron. J., February, 2023

Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.

Chenghu Dai, Yuanyuan Du, Qi Shi, Ruixuan Wang, Hao Zheng, Wenjuan Lu, Chunyu Peng, Licai Hao, Zhiting Lin, Xiulong Wu

Microelectron. J., February, 2023

Radiation-hardened 14T SRAM cell by polar design for space applications.

Licai Hao, Bin Qiang, Chenghu Dai, Chunyu Peng, Wenjuan Lu, Zhiting Lin, Li Liu, Qiang Zhao, Xiulong Wu, Fei Sun

IEICE Electron. Express, 2023