Junning Chen

According to our database1, Junning Chen authored at least 27 papers between 2006 and 2023.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

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Bibliography

2023
In Situ Storing 8T SRAM-CIM Macro for Full-Array Boolean Logic and Copy Operations.
IEEE J. Solid State Circuits, May, 2023

Write-enhanced and radiation-hardened SRAM for multi-node upset tolerance in space-radiation environments.
Int. J. Circuit Theory Appl., January, 2023

2022
Configurable Memory With a Multilevel Shared Structure Enabling In-Memory Computing.
IEEE Trans. Very Large Scale Integr. Syst., 2022

In-Memory Multibit Multiplication Based on Bitline Shifting.
IEEE Trans. Circuits Syst. II Express Briefs, 2022

Offset-Compensation High-Performance Sense Amplifier for Low-Voltage DRAM Based on Current Mirror and Switching Point.
IEEE Trans. Circuits Syst. II Express Briefs, 2022

Information sharing model of upstream supply chain based on embedded technology.
Int. J. Inf. Commun. Technol., 2022

2021
Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports.
IEEE J. Solid State Circuits, 2021

Cascade Current Mirror to Improve Linearity and Consistency in SRAM In-Memory Computing.
IEEE J. Solid State Circuits, 2021

2020
Novel Write-Enhanced and Highly Reliable RHPD-12T SRAM Cells for Space Applications.
IEEE Trans. Very Large Scale Integr. Syst., 2020

In-Memory Computing With Double Word Lines and Three Read Ports for Four Operands.
IEEE Trans. Very Large Scale Integr. Syst., 2020

Multiple Sharing 7T1R Nonvolatile SRAM With an Improved Read/Write Margin and Reliable Restore Yield.
IEEE Trans. Very Large Scale Integr. Syst., 2020

Challenges and Solutions of the TFET Circuit Design.
IEEE Trans. Circuits Syst., 2020

2019
Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application.
IEEE Trans. Very Large Scale Integr. Syst., 2019

An inverter chain with parallel output nodes for eliminating single-event transient pulse.
IEICE Electron. Express, 2019

A single event upset tolerant latch with parallel nodes.
IEICE Electron. Express, 2019

2018
Average 7T1R Nonvolatile SRAM With R/W Margin Enhanced for Low-Power Application.
IEEE Trans. Very Large Scale Integr. Syst., 2018

Offset voltage suppressed sense amplifier with self-adaptive distribution transformation technique.
IEICE Electron. Express, 2018

A dual-output hardening design of inverter chain for P-hit single-event transient pulse elimination.
IEICE Electron. Express, 2018

Computational insight into dengue virus NS2B-NS3 protease inhibition: A combined ligand- and structure-based approach.
Comput. Biol. Chem., 2018

2017
A Pipeline Replica Bitline Technique for Suppressing Timing Variation of SRAM Sense Amplifiers in a 28-nm CMOS Process.
IEEE J. Solid State Circuits, 2017

2016
Variation-resilient pipelined timing tracking circuit for SRAM sense amplifier.
IEICE Electron. Express, 2016

2015
Multi-stage dual replica bit-line delay technique for process-variation-robust timing of low voltage SRAM sense amplifier.
Frontiers Inf. Technol. Electron. Eng., 2015

Erratum: A novel cascade control replica-bitline delay technique for reducing timing process-variation of SRAM sense amplifier [IEICE Electronics Express Vol 12 (2015) No 5 pp 20150102].
IEICE Electron. Express, 2015

A novel cascade control replica-bitline delay technique for reducing timing process-variation of SRAM sense amplifier.
IEICE Electron. Express, 2015

2013
The Design of High Performance, Low Power Triple-Track Magnetic Sensor Chip.
Sensors, 2013

2006
A Compact Equivalent Circuit Model of HVLDMOS and Application in HIVC Design.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems 2006, 2006

Physics-based Modeling and Simulation of Dual Material Gate(DMG) LDMOS.
Proceedings of the IEEE Asia Pacific Conference on Circuits and Systems 2006, 2006


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