David Ney

According to our database, David Ney authored at least 4 papers between 2014 and 2020.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2020

Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS.

Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho

Proceedings of the 2020 IEEE International Reliability Physics Symposium, 2020

2017

Guidelines for intermediate back end of line (BEOL) for 3D sequential integration.

Claire Fenouillet-Béranger, S. Beaurepaire, Fabien Deprat, Alexandre Ayres De Sousa, Laurent Brunet, Perrine Batude, Olivier Rozeau, François Andrieu, Paul Besombes, M.-P. Samson, Bernard Previtali, F. Nemouchi, G. Rodriguez, Philippe Rodriguez, R. Famulok, Nils Rambal, Viorel Balan, Z. Saghi, V. Jousseaume, Charles-Antoine Guérin, F. Ibars, F. Proud, D. Nouguier, David Ney, V. Delaye, H. Dansas, X. Federspiel, Maud Vinet

Proceedings of the 47th European Solid-State Device Research Conference, 2017

2015

Interconnect design study for electromigration reliability improvement.

Giulio Marti, Lucile Arnaud, David Ney, Yves Wouters

Proceedings of the IEEE International Reliability Physics Symposium, 2015

2014

Power grid redundant path contribution in system on chip (SoC) robustness against electromigration.

Boukary Ouattara, Lise Doyen, David Ney, Habib Mehrez, Pirouz Bazargan-Sabet

Microelectron. Reliab., 2014