Garam Kim

According to our database, Garam Kim authored at least 11 papers between 2012 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

IMPACT: Industrial Machine Perception via Acoustic Cognitive Transformer.

Changheon Han, Yuseop Sim, Hoin Jung, Jiho Lee, Hojun Lee, Yun Seok Kang, Sucheol Woo, Garam Kim, Hyung Wook Park, Martin Byung-Guk Jun

CoRR, July, 2025

Solving jigsaw puzzles by predicting fragment's coordinate based on vision transformer.

Garam Kim, Hyeonseong Cho, Hyoungsik Nam

Expert Syst. Appl., 2025

Multi-Level Cell Structure for Capacitor-Less 1T DRAM With SiGe-Based Separated Data Storing Regions.

Eungi Hwang, Jang Hyun Kim, Sangwan Kim, Garam Kim

IEEE Access, 2025

2022

A 40-Gb/s/pin Low-Voltage POD Single-Ended PAM-4 Transceiver with Timing Calibrated Reset-less Slicer and Bidirectional T-Coil for GDDR7 Application.

Hyunsub Norbert Rie, Chang Soo Yoon, Jindo Byun, Sucheol Lee, Garam Kim, Joohwan Kim, Junyoung Park, Hyunyoon Cho, Youngdo Um, Hyungmin Jin, Kwangseob Shin, Minsu Jung, Go-Eun Cha, Minjae Lee, YoungMin Kim, Byeori Han, Yuseong Jeon, Jisun Lee, EunSeok Shin, Hyuk-Jun Kwon, Youngdon Choi, Jung-Hwan Choi, Hyungjong Ko

Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022

2021

Effect of Scan Time on Neuro 18F-Fluorodeoxyglucose Positron Emission Tomography Image Generated Using Deep Learning.

Jaewon Kim, Sungsik Kang, Konsu Lee, Jin Ho Jung, Garam Kim, Hyunkeong Lim, Yong Choi, Sangwon Lee, Mijin Yun

J. Medical Imaging Health Informatics, 2021

2020

Optimization of spacer and source/channel junction to improve TFET characteristics.

Garam Kim, Jang-Hyun Kim, Sangwan Kim

IEICE Electron. Express, 2020

13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate.

Doo-Hyun Kim, Hyunggon Kim, Sung-Won Yun, Youngsun Song, Jisu Kim, Sung-Min Joe, Kyung-Hwa Kang, Joonsuc Jang, Hyun-Jun Yoon, Kangbin Lee, Minseok Kim, Joonsoo Kwon, Jonghoo Jo, Sehwan Park, Jiyoon Park, Jisoo Cho, Sohyun Park, Garam Kim, Jinbae Bang, Heejin Kim, Jongeun Park, Deokwoo Lee, Seonyong Lee, Hwajun Jang, Hanjun Lee, Donghyun Shin, Jungmin Park, Jungkwan Kim, Jongmin Kim, Kichang Jang, II Han Park, Seung Hyun Moon, Myung-Hoon Choi, Pansuk Kwak, Joo-Yong Park, Youngdon Choi, Sanglok Kim, Seungjae Lee, Dongku Kang, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Jung-Hwan Choi, Sangjoon Hwang, Jaeheon Jeong

Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020

2016

Depth guided selection of adaptive region of interest for Grabcut-based image segmentation.

Garam Kim, Jae-Young Sim

Proceedings of the Asia-Pacific Signal and Information Processing Association Annual Summit and Conference, 2016

2013

Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel.

Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Byung-Gook Park

IEICE Trans. Electron., 2013

2012

Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors.

Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park

IEICE Trans. Electron., 2012

Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using <i>V_T</i>-Control Doping Region.

Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park

IEICE Trans. Electron., 2012