Hyunyoon Cho
According to our database1,
Hyunyoon Cho
authored at least 15 papers
between 2011 and 2022.
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Bibliography
2022
A 40-Gb/s/pin Low-Voltage POD Single-Ended PAM-4 Transceiver with Timing Calibrated Reset-less Slicer and Bidirectional T-Coil for GDDR7 Application.
Proceedings of the IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), 2022
A 60-Gb/s/pin single-ended PAM-4 transmitter with timing skew training and low power data encoding in mimicked 10nm class DRAM process.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2022
2021
A 3.2-12.8Gb/s Duty-Cycle Compensating Quadrature Error Corrector for DRAM Interfaces, With Fast Locking and Low Power Characteristics.
Proceedings of the 47th ESSCIRC 2021, 2021
A 24Gb/s/pin PAM-4 Built Out Tester chip enabling PAM-4 chips test with NRZ interface ATE.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2021
2020
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power.
Proceedings of the IEEE International Solid- State Circuits Conference, 2019
2018
IEEE Access, 2018
2017
IEEE Comput. Archit. Lett., 2017
Understanding power-performance relationship of energy-efficient modern DRAM devices.
Proceedings of the 2017 IEEE International Symposium on Workload Characterization, 2017
SOUP-N-SALAD: Allocation-Oblivious Access Latency Reduction with Asymmetric DRAM Microarchitectures.
Proceedings of the 2017 IEEE International Symposium on High Performance Computer Architecture, 2017
Proceedings of the 2017 IEEE International Symposium on High Performance Computer Architecture, 2017
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2017
2012
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.
IEEE J. Solid State Circuits, 2012
A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
2011
Proceedings of the IEEE International Solid-State Circuits Conference, 2011