Seung Hyun Moon
According to our database1, Seung Hyun Moon authored at least 2 papers between 2001 and 2021.
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A 512Gb 3b/Cell 7<sup>th</sup> -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power IC system.
Proceedings of the 2001 8th IEEE International Conference on Electronics, 2001