Hyunggon Kim

Affiliations:
  • Samsung, Seoul, South Korea


According to our database1, Hyunggon Kim authored at least 12 papers between 2010 and 2024.

Collaborative distances:
  • Dijkstra number2 of four.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2024

2021
Issues and Key Technologies for Next Generation 3D NAND.
Proceedings of the International Conference on Electronics, Information, and Communication, 2021

2020

2018
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory.
IEEE J. Solid State Circuits, 2018

2017
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.
IEEE J. Solid State Circuits, 2017


2016


2015

2014

2012
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface.
IEEE J. Solid State Circuits, 2012

2010
A 159mm<sup>2</sup> 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface.
Proceedings of the IEEE International Solid-State Circuits Conference, 2010


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