Inwoo Jun

According to our database, Inwoo Jun authored at least 3 papers between 2012 and 2025.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2025

30.3 A 24Gb 42.5Gb/s GDDR7 DRAM with Low-Power WCK Distribution, an RC-Optimized Dual-Emphasis TX, and Voltage/Time-Margin-Enhanced Power Reduction.

Sang-Hoon Kim, Jaehyeok Baek, Moon-Chul Choi, Daewoong Lee, Donggun An, Se-Mi Kim, Yeonggeun Song, Minkyo Shim, Sung-Yong Cho, Dongha Lee, Gun-hee Cho, Inwoo Jun, Juseop Park, TaeYoon Lee, Hwan-Chul Jung, Chanyong Lee, Gil-Young Kang, Hye-Ran Kim, Jongmyung Lee, Young Su Joo, Hyo-Jin Jung, Bokyeon Won, Ji-Hak Yu, Sangkeun Han, Yechan Hwang, Chungman Kim, Seok-Jung Kim, YoungSeok Lee, Young-Tae Kim, Myeong-O. Kim, Wonhwa Shin, Tae-Young Oh, SangJoon Hwang

Proceedings of the IEEE International Solid-State Circuits Conference, 2025

2013

A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme.

Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Seok-Hun Hyun, Hanki Jeoung, Ki Won Lee, Jun-Seok Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Byungchul Kim, Jung-Hwan Choi, Seong-Jin Jang, Chi-Wook Kim, Jung-Bae Lee, Joo-Sun Choi

IEEE J. Solid State Circuits, 2013

2012

A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme.

Kyomin Sohn, Taesik Na, Indal Song, Yong Shim, Wonil Bae, Sanghee Kang, Dongsu Lee, Hangyun Jung, Hanki Jeoung, Ki Won Lee, Junsuk Park, Jongeun Lee, Byunghyun Lee, Inwoo Jun, Juseop Park, Junghwan Park, Hundai Choi, Sanghee Kim, Haeyoung Chung, Young Choi, Dae-Hee Jung, Jang Seok Choi, Byung-Sick Moon, Jung-Hwan Choi, Byungchul Kim, Seong-Jin Jang, Joo-Sun Choi, Kyungseok Oh

Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012