Jung-Bae Lee
According to our database1,
Jung-Bae Lee
authored at least 21 papers
between 2005 and 2021.
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Bibliography
2021
An 8.5-Gb/s/Pin 12-Gb LPDDR5 SDRAM With a Hybrid-Bank Architecture, Low Power, and Speed-Boosting Techniques.
IEEE J. Solid State Circuits, 2021
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme.
IEEE J. Solid State Circuits, 2021
25.2 A 16Gb Sub-1V 7.14Gb/s/pin LPDDR5 SDRAM Applying a Mosaic Architecture with a Short-Feedback 1-Tap DFE, an FSS Bus with Low-Level Swing and an Adaptively Controlled Body Biasing in a 3<sup>rd</sup>-Generation 10nm DRAM.
Proceedings of the IEEE International Solid-State Circuits Conference, 2021
2020
IEEE J. Solid State Circuits, 2020
22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
22.2 An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process.
Proceedings of the 2020 IEEE International Solid- State Circuits Conference, 2020
2019
A 5Gb/s/pin 16Gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration.
Proceedings of the 2019 Symposium on VLSI Circuits, Kyoto, Japan, June 9-14, 2019, 2019
2014
IEEE Trans. Circuits Syst. II Express Briefs, 2014
25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014
2013
A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme.
IEEE J. Solid State Circuits, 2013
An 8Gb/s 0.65mW/Gb/s forwarded-clock receiver using an ILO with dual feedback loop and quadrature injection scheme.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013
2012
A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking.
IEEE J. Solid State Circuits, 2012
An 8GB/s quad-skew-cancelling parallel transceiver in 90nm CMOS for high-speed DRAM interface.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
A 1.2V 30nm 1.6Gb/s/pin 4Gb LPDDR3 SDRAM with input skew calibration and enhanced control scheme.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012
2011
Proceedings of the IEEE International Solid-State Circuits Conference, 2011
2009
BER Measurement of a 5.8-Gb/s/pin Unidirectional Differential I/O for DRAM Application With DIMM Channel.
IEEE J. Solid State Circuits, 2009
Proceedings of the IEEE International Solid-State Circuits Conference, 2009
Proceedings of the IEEE International Solid-State Circuits Conference, 2009
2007
Proceedings of the Computational Science - ICCS 2007, 7th International Conference, Beijing, China, May 27, 2007
2006
A 512-mb DDR3 SDRAM prototype with C<sub>IO</sub> minimization and self-calibration techniques.
IEEE J. Solid State Circuits, 2006
2005
Proceedings of the Computational Science and Its Applications, 2005