Indal Song

Affiliations:
  • Samsung, Seoul, South Korea


According to our database1, Indal Song authored at least 10 papers between 2012 and 2018.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
Dataset
Other 

Links

On csauthors.net:

Bibliography

2018
Dual-Loop Two-Step ZQ Calibration for Dynamic Voltage-Frequency Scaling in LPDDR4 SDRAM.
IEEE J. Solid State Circuits, 2018

A sub-0.85V, 6.4GBP/S/Pin TX-Interleaved Transceiver with Fast Wake-Up Time Using 2-Step Charging Control and VOHCalibration in 20NM DRAM Process.
Proceedings of the 2018 IEEE Symposium on VLSI Circuits, 2018

An Enhanced Built-off-Test Transceiver with Wide-range, Self-calibration Engine for 3.2 Gb/s/pin DDR4 SDRAM.
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2018

2017


2016
Design of non-contact 2Gb/s I/O test methods for high bandwidth memory (HBM).
Proceedings of the IEEE Asian Solid-State Circuits Conference, 2016

2015
17.7 A digital DLL with hybrid DCC using 2-step duty error extraction and 180° phase aligner for 2.67Gb/S/pin 16Gb 4-H stack DDR4 SDRAM with TSVs.
Proceedings of the 2015 IEEE International Solid-State Circuits Conference, 2015

2014
Design technologies for a 1.2V 2.4Gb/s/pin high capacity DDR4 SDRAM with TSVs.
Proceedings of the Symposium on VLSI Circuits, 2014

2013
A 1.2 V 30 nm 3.2 Gb/s/pin 4 Gb DDR4 SDRAM With Dual-Error Detection and PVT-Tolerant Data-Fetch Scheme.
IEEE J. Solid State Circuits, 2013

2012
A 1.2V 30nm 3.2Gb/s/pin 4Gb DDR4 SDRAM with dual-error detection and PVT-tolerant data-fetch scheme.
Proceedings of the 2012 IEEE International Solid-State Circuits Conference, 2012


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