P. Perreau

According to our database, P. Perreau authored at least 4 papers between 2010 and 2016.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2016

Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration.

R. Berthelon, François Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, Didier Dutartre, A. Claverie, Michel Haond

Proceedings of the 46th European Solid-State Device Research Conference, 2016

2014

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs.

François Andrieu, Mikaël Cassé, E. Baylac, P. Perreau, O. Nier, Denis Rideau, R. Berthelon, Franck Pourchon, A. Pofelski, Barbara De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, Vincent Barral, Rossella Ranica, Nicolas Planes, Walter Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, Michel Haond

Proceedings of the 44th European Solid State Device Research Conference, 2014

2012

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.

Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2010

32nm and beyond Multi-VT Ultra-Thin Body and BOX FDSOI: From device to circuit.

Olivier Thomas, Jean-Philippe Noel, Claire Fenouillet-Béranger, Marie-Anne Jaud, J. Dura, P. Perreau, Frédéric Boeuf, François Andrieu, D. Delprat, F. Boedt, Konstantin Bourdelle, Bich-Yen Nguyen, Andrei Vladimirescu, Amara Amara

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2010), May 30, 2010