Noriaki Maeda

Orcid: 0000-0002-4447-8917

According to our database1, Noriaki Maeda authored at least 12 papers between 2005 and 2021.

Collaborative distances:
  • Dijkstra number2 of five.
  • Erdős number3 of four.

Timeline

Legend:

Book 
In proceedings 
Article 
PhD thesis 
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Links

On csauthors.net:

Bibliography

2021
Walking Practice Combined with Virtual Reality Contributes to Early Acquisition of Symmetry Prosthetic Walking: An Experimental Study Using Simulated Prosthesis.
Symmetry, 2021

Association between the Degree of Pre-Synaptic Dopaminergic Pathway Degeneration and Motor Unit Firing Behavior in Parkinson's Disease Patients.
Sensors, 2021

Effect of Acute Static Stretching on the Activation Patterns Using High-Density Surface Electromyography of the Gastrocnemius Muscle during Ramp-Up Task.
Sensors, 2021

2014
10.2 A 28nm HPM heterogeneous multi-core mobile application processor with 2GHz cores and low-power 1GHz cores.
Proceedings of the 2014 IEEE International Conference on Solid-State Circuits Conference, 2014

2013
Power-Management Features of R-Mobile U2, an Integrated Application Processor and Baseband Processor.
IEEE Micro, 2013

A 0.41 µA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS.
IEEE J. Solid State Circuits, 2013

A 28nm High-κ metal-gate single-chip communications processor with 1.5GHz dual-core application processor and LTE/HSPA+-capable baseband processor.
Proceedings of the 2013 IEEE International Solid-State Circuits Conference, 2013

2012
A 0.41µA standby leakage 32Kb embedded SRAM with Low-Voltage resume-standby utilizing all digital current comparator in 28nm HKMG CMOS.
Proceedings of the Symposium on VLSI Circuits, 2012

2009
A 40-nm low-power SRAM with multi-stage replica-bitline technique for reducing timing variation.
Proceedings of the IEEE Custom Integrated Circuits Conference, 2009

2008
65nm Low-Power High-Density SRAM Operable at 1.0V under 3σ Systematic Variation Using Separate Vth Monitoring and Body Bias for NMOS and PMOS.
Proceedings of the 2008 IEEE International Solid-State Circuits Conference, 2008

2006
90-nm process-variation adaptive embedded SRAM modules with power-line-floating write technique.
IEEE J. Solid State Circuits, 2006

2005
A 300-MHz 25-μA/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor.
IEEE J. Solid State Circuits, 2005


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