Remi Coquand

According to our database, Remi Coquand authored at least 4 papers between 2012 and 2013.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2013

Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold

Proceedings of the European Solid-State Device Research Conference, 2013

Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations.

Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo

Proceedings of the European Solid-State Device Research Conference, 2013

2012

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs.

Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.

Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot

Proceedings of the 2012 European Solid-State Device Research Conference, 2012