T. Poiroux

According to our database, T. Poiroux authored at least 3 papers between 2001 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below.

J. Mazurier, Olivier Weber, François Andrieu, Alain Toffoli, Olivier Thomas, Fabienne Allain, Jean-Philippe Noel, Marc Belleville, Olivier Faynot, T. Poiroux

J. Low Power Electron., 2012

Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.

Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot

Proceedings of the 2012 European Solid-State Device Research Conference, 2012

2001

Plasma charging damage mechanisms and impact on new technologies.

Gilles Reimbold, T. Poiroux

Microelectron. Reliab., 2001