Thomas Y. Hoffmann

According to our database, Thomas Y. Hoffmann authored at least 3 papers between 2009 and 2012.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2012

Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling.

Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann

IEEE Trans. Very Large Scale Integr. Syst., 2012

2011

Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling.

Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann

Proceedings of the International Symposium on Circuits and Systems (ISCAS 2011), 2011

2009

Migrating from planar to FinFET for further CMOS scaling: SOI or bulk?

Thomas Chiarella, Liesbeth Witters, Abdelkarim Mercha, Christoph Kerner, Rok Dittrich, Michal Rakowski, Claude Ortolland, Lars-Åke Ragnarsson, Bertrand Parvais, An De Keersgieter, Stefan Kubicek, Augusto Redolfi, R. Rooyackers, C. Vrancken, S. Brus, A. Lauwers, Philippe Absil, S. Biesemans, Thomas Y. Hoffmann

Proceedings of the 35th European Solid-State Circuits Conference, 2009