Wandong Kim

According to our database, Wandong Kim authored at least 4 papers between 2012 and 2022.

Collaborative distances:

• Dijkstra number of five.
• Erdős number of four.

2022

Cell Operation Technologies to Overcome Scale-down Issues in 3D NAND Flash Memory.

Wandong Kim, Dae-Seok Byeon, Sung-Min Joe, Jinyub Lee, Jai Hyuk Song

Proceedings of the International Conference on Electronics, Information, and Communication, 2022

2017

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers.

Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Cheon An Lee, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yup Lee, Ki-Tae Park, Kyehyun Kyung

IEEE J. Solid State Circuits, 2017

2016

7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers.

Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi

Proceedings of the 2016 IEEE International Solid-State Circuits Conference, 2016

2012

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer).

Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Hyungjin Kim, Byung-Gook Park

IEICE Trans. Electron., 2012